公开(公告)号：US10403506B2

公开(公告)日：2019-09-03

申请号：US15863954

申请日：2018-01-07

Applicant: Infineon Technologies AG

Inventor： Christoph Kamseder ,  Franco Mariani ,  Andreas Bauer ,  Thomas Fischer

IPC: H01L21/304 ,  H01L21/78 ,  H01L21/67 ,  H01L21/66

Abstract: A method of manufacturing electronic dies by separating a wafer into electronic dies, wherein the method comprises forming a groove in the wafer with a first material removal tool having a first thickness, enlarging the groove by a second material removal tool having a second thickness larger than the first thickness, and subsequently increasing a depth of the groove by a third material removal tool having a third thickness smaller than the second thickness until the wafer is separated.

公开(公告)号：US20190214299A1

公开(公告)日：2019-07-11

申请号：US15863954

申请日：2018-01-07

Applicant: Infineon Technologies AG

Inventor： Christoph Kamseder ,  Franco Mariani ,  Andreas Bauer ,  Thomas Fischer

IPC: H01L21/78 ,  H01L21/67

CPC classification number: H01L21/3043 ,  B28D5/022 ,  H01L21/67092 ,  H01L21/78 ,  H01L22/34

Abstract: A method of manufacturing electronic dies by separating a wafer into electronic dies, wherein the method comprises forming a groove in the wafer with a first material removal tool having a first thickness, enlarging the groove by a second material removal tool having a second thickness larger than the first thickness, and subsequently increasing a depth of the groove by a third material removal tool having a third thickness smaller than the second thickness until the wafer is separated.