MOLDED SEMICONDUCTOR PACKAGE WITH HIGH VOLTAGE ISOLATION

    公开(公告)号:US20220278060A1

    公开(公告)日:2022-09-01

    申请号:US17746306

    申请日:2022-05-17

    IPC分类号: H01L23/00 H01L21/56 H01L23/31

    摘要: A molded semiconductor package includes: a semiconductor die attached to a substrate, the semiconductor die having a bond pad at a first side of the semiconductor die which faces away from the substrate and an insulating layer covering the first side; an electrical conductor attached to a part of the bond pad exposed by an opening in the insulating layer; a mold compound encasing the semiconductor die; and an electrically insulative material filling the opening in the insulating layer and sealing the part of the bond pad exposed by the opening in the insulating layer. The electrically insulative material separates the mold compound from the part of the bond pad exposed by the opening in the insulating layer. A corresponding method of producing the molded semiconductor package also is described.

    Molded semiconductor package with high voltage isolation

    公开(公告)号:US11355460B1

    公开(公告)日:2022-06-07

    申请号:US17113170

    申请日:2020-12-07

    IPC分类号: H01L23/00 H01L23/31 H01L21/56

    摘要: A molded semiconductor package includes: a semiconductor die attached to a substrate, the semiconductor die having a bond pad at a first side of the semiconductor die which faces away from the substrate and an insulating layer covering the first side; an electrical conductor attached to a part of the bond pad exposed by an opening in the insulating layer; a mold compound encasing the semiconductor die; and an electrically insulative material filling the opening in the insulating layer and sealing the part of the bond pad exposed by the opening in the insulating layer. The electrically insulative material separates the mold compound from the part of the bond pad exposed by the opening in the insulating layer. A breakdown voltage of the electrically insulative material is greater than a breakdown voltage of the mold compound.

    MOLDED SEMICONDUCTOR PACKAGE WITH HIGH VOLTAGE ISOLATION

    公开(公告)号:US20220181280A1

    公开(公告)日:2022-06-09

    申请号:US17113170

    申请日:2020-12-07

    IPC分类号: H01L23/00 H01L23/31 H01L21/56

    摘要: A molded semiconductor package includes: a semiconductor die attached to a substrate, the semiconductor die having a bond pad at a first side of the semiconductor die which faces away from the substrate and an insulating layer covering the first side; an electrical conductor attached to a part of the bond pad exposed by an opening in the insulating layer; a mold compound encasing the semiconductor die; and an electrically insulative material filling the opening in the insulating layer and sealing the part of the bond pad exposed by the opening in the insulating layer. The electrically insulative material separates the mold compound from the part of the bond pad exposed by the opening in the insulating layer. A breakdown voltage of the electrically insulative material is greater than a breakdown voltage of the mold compound.