公开(公告)号：US09406754B2

公开(公告)日：2016-08-02

申请号：US14447174

申请日：2014-07-30

Applicant: Infineon Technologies AG

Inventor： Dorin Ioan Mohai ,  Ilie-Ionut Cristea ,  Adrian Finney ,  Bogdan-Eugen Matei ,  Andrei Cobzaru

IPC: H01L27/146 ,  H01L29/10 ,  H01L29/06 ,  H01L29/739 ,  H01L27/07 ,  H03K17/00

CPC classification number: H01L29/1095 ,  H01L27/0716 ,  H01L29/0603 ,  H01L29/7395 ,  H03K17/00 ,  H03K17/18

Abstract: A semiconductor device comprises a semiconductor substrate doped with dopants of a first type and a vertical transistor composed of one or more transistor cells. Each transistor cell has a first region formed in the substrate and doped with dopants of a second type, and the first regions form first pn-junctions with the surrounding substrate. At least a first well region is formed in the substrate and doped with dopants of a second type to form a second pn-junction with the substrate. The first well region is electrically connected to the first regions of the vertical transistor via a semiconductor switch. The semiconductor device comprises a detection circuit, which is integrated in the substrate and configured to detect whether the first pn-junctions are reverse biased. The switch is opened when the first pn-junctions are reverse biased and the switch is closed when the first pn-junctions are not reverse biased.

Abstract translation: 半导体器件包括掺杂有第一类型的掺杂剂的半导体衬底和由一个或多个晶体管单元组成的垂直晶体管。 每个晶体管单元具有形成在衬底中并掺杂有第二类型的掺杂剂的第一区域，并且第一区域与周围衬底形成第一pn结。 至少第一阱区形成在衬底中并且掺杂有第二类型的掺杂剂以与衬底形成第二pn结。 第一阱区经由半导体开关电连接到垂直晶体管的第一区域。 半导体器件包括检测电路，其集成在衬底中并被配置为检测第一pn结是否被反向偏置。 当第一个pn-junction反向偏置时，开关打开，并且当第一个pn结不被反向偏置时开关闭合。

公开(公告)号：US12181361B2

公开(公告)日：2024-12-31

申请号：US17709934

申请日：2022-03-31

Applicant: Infineon Technologies AG

Inventor： Radu Mihaescu ,  Dan-Alexandru Mocanu ,  Ilie-Ionut Cristea

IPC: G01L27/00 ,  B60C23/04

Abstract: A pressure sensor module includes a pressure sensor configured to periodically measure an internal air pressure within an enclosure and generate a sensor signal having plurality of sensor values; a signal processing chain for conditioning the sensor signal to generate a plurality of conditioned sensor values; a memory configured to store each of the plurality of conditioned sensor values; and a processing circuit coupled to the pressure sensor via the signal processing chain for receiving a current conditioned sensor value and coupled to the memory for receiving a previous conditioned sensor value. The processing circuit is configured monitor for a fault, including calculating a delta pressure value between the current and previous conditioned sensor values, comparing the delta pressure value to a pressure threshold value, and triggering a diagnostic of the signal processing chain if the delta pressure value is greater than the pressure threshold value.

公开(公告)号：US12095119B2

公开(公告)日：2024-09-17

申请号：US17697143

申请日：2022-03-17

Applicant: Infineon Technologies AG

Inventor： Dan-Alexandru Mocanu ,  Bogdan Bumbacea ,  Ilie-Ionut Cristea ,  Radu Mihaescu

IPC: H01M50/578 ,  G01R31/396 ,  G06F13/42

CPC classification number: H01M50/578 ,  G01R31/396 ,  G06F13/4282

Abstract: A sensor device includes a pressure sensor configured to measure an internal air pressure and generate a sensor signal representative of the measured internal air pressure; a serial peripheral interface (SPI) configured to receive SPI commands; a wake-up terminal configured to output fault signals; and a processing circuit. The processing circuit is configurable between a normal running mode and a low power monitoring (LPM) mode. In LPM mode, the processing circuit is configured to alternate between a sampling phase during which the processing circuit evaluates the sensor signal and a powered-down phase during which the processing circuit is in a low power state. The processing circuit is configured to monitor for at least one SPI communication fault corresponding to information received on the SPI, generate a communication fault signal in response to detecting the at least one SPI communication fault, and output the communication fault signal from the wake-up terminal.

公开(公告)号：US20160035834A1

公开(公告)日：2016-02-04

申请号：US14447174

申请日：2014-07-30

Applicant: Infineon Technologies AG

Inventor： Dorin Ioan Mohai ,  Ilie-Ionut Cristea ,  Adrian Finney ,  Bogdan-Eugen Matei ,  Andrei Cobzaru

IPC: H01L29/10 ,  H01L29/06 ,  H01L29/739

CPC classification number: H01L29/1095 ,  H01L27/0716 ,  H01L29/0603 ,  H01L29/7395 ,  H03K17/00 ,  H03K17/18

Abstract: A semiconductor device comprises a semiconductor substrate doped with dopants of a first type and a vertical transistor composed of one or more transistor cells. Each transistor cell has a first region formed in the substrate and doped with dopants of a second type, and the first regions form first pn-junctions with the surrounding substrate. At least a first well region is formed in the substrate and doped with dopants of a second type to form a second pn-junction with the substrate. The first well region is electrically connected to the first regions of the vertical transistor via a semiconductor switch. The semiconductor device comprises a detection circuit, which is integrated in the substrate and configured to detect whether the first pn-junctions are reverse biased. The switch is opened when the first pn-junctions are reverse biased and the switch is closed when the first pn-junctions are not reverse biased.

Abstract translation: 半导体器件包括掺杂有第一类型的掺杂剂的半导体衬底和由一个或多个晶体管单元组成的垂直晶体管。 每个晶体管单元具有形成在衬底中并掺杂有第二类型的掺杂剂的第一区域，并且第一区域与周围衬底形成第一pn结。 至少第一阱区形成在衬底中并且掺杂有第二类型的掺杂剂以与衬底形成第二pn结。 第一阱区经由半导体开关电连接到垂直晶体管的第一区域。 半导体器件包括检测电路，其集成在衬底中并被配置为检测第一pn结是否被反向偏置。 当第一个pn-junction反向偏置时，开关打开，并且当第一个pn结不被反向偏置时开关闭合。