-
公开(公告)号：US10666158B2
公开(公告)日：2020-05-26
申请号：US16425718
申请日：2019-05-29
Applicant: Infineon Technologies AG
Inventor： Albino Pidutti , Damiano Gadler , Ioannis Pachnis
Abstract: A rectifier device is described herein. In accordance with one embodiment, the rectifier device includes a semiconductor body doped with dopants of a first doping type and one or more well regions arranged in the semiconductor body and doped with dopants of a second doping type. The rectifier device further includes a controllable resistance circuit that is electrically connected between the semiconductor body and a first well region of one or more well regions and configured to provide a resistive current path between the semiconductor body and the first well region. The resistance of the current path is dependent on an instantaneous level of an alternating input voltage.
-
公开(公告)号：US20180166999A1
公开(公告)日：2018-06-14
申请号：US15379007
申请日：2016-12-14
Applicant: Infineon Technologies AG
Inventor： Albino Pidutti , Damiano Gadler , Ioannis Pachnis
CPC classification number: H02M7/217 , H01L27/0676 , H01L29/7802
Abstract: A rectifier is described herein. According to one example, the rectifier includes a semiconductor substrate and further includes an anode terminal and a cathode terminal connected by a load current path of a first MOS transistor and a diode that is connected parallel to a load current path. An alternating input voltage is operably applied between the anode terminal and the cathode terminal. Further, the rectifier includes a control circuit that is configured to switch the first MOS transistor on for an on-time period, during which the diode is forward biased. The first MOS transistor, the diode, and the control circuit are integrated in the semiconductor substrate.
-
公开(公告)号：US20200274528A1
公开(公告)日：2020-08-27
申请号：US16799141
申请日：2020-02-24
Applicant: Infineon Technologies AG
Inventor： Michael Lenz , Damiano Gadler , Ioannis Pachnis , Albino Pidutti
IPC: H03K17/042 , H03K17/16 , H01L27/06 , H02M3/158
Abstract: An integrated circuit includes a transistor having a control electrode and a load current path to activate and to deactivate a load current path between a first terminal and a second terminal. A diode is in parallel with the load current path of the transistor. The integrated circuit includes a detector circuit to generate a control signal depending on a voltage between the first terminal and the second terminal. The integrated circuit includes a driver circuit having a main branch and a first feedforward branch. The main branch includes circuit components to generate a control voltage for the control electrode of the transistor in accordance with the control signal, and the feedforward branch comprises circuit components to generate a charging current or, alternatively, a discharging current as a reaction to a slope of the control signal, the current charging or discharging, respectively, the control electrode of the transistor.
-
公开(公告)号：US20190372477A1
公开(公告)日：2019-12-05
申请号：US16425641
申请日：2019-05-29
Applicant: Infineon Technologies AG
Inventor： Albino Pidutti , Damiano Gadler , Ioannis Pachnis
IPC: H02M7/219
Abstract: A rectifier device is described herein. In accordance with one embodiment, the rectifier device includes a semiconductor body doped with dopants of a first doping type and one or more well regions arranged in the semiconductor body and doped with dopants of a second doping type. Thereby, the one or more well regions and the surrounding semiconductor body form a pn-junction. The rectifier device further includes an anode terminal and a cathode terminal connected by a load current path of a first MOS transistor and a diode, which is parallel to the load current path. An alternating input voltage is applied between the anode terminal and the cathode terminal during operation of the rectifier device. The rectifier device includes a control circuit that is configured to switch on the first MOS transistor for an on-time period, during which the diode is forward biased, wherein the first MOS transistor and the diode are integrated in the semiconductor body and the control circuit is at least partly arranged in the one or more well regions. Further, the rectifier device includes a switching circuit that is configured to electrically connect a first well region of the one or more well regions with the anode terminal, as long as the alternating input voltage is above a threshold value, and, to pull the voltage of first well region towards the alternating input voltage, as long as the alternating input voltage is at or below the threshold value.
-
公开(公告)号：US10381919B2
公开(公告)日：2019-08-13
申请号：US15379055
申请日：2016-12-14
Applicant: Infineon Technologies AG
Inventor： Albino Pidutti , Damiano Gadler , Herbert Gietler , Michael Lenz , Yavuz Kilic , Ioannis Pachnis
Abstract: A rectifier is described herein. According to one example, the rectifier includes a semiconductor substrate and further includes an anode terminal and a cathode terminal connected by a load current path of a first MOS transistor and a diode that is connected parallel to a load current path. An alternating input voltage is operably applied between the anode terminal and the cathode terminal. Further, the rectifier includes a control circuit that is configured to switch the first MOS transistor on for an on-time period, during which the diode is forward biased. The first MOS transistor, the diode, and the control circuit are integrated in the semiconductor substrate.
-
Patent Agency Ranking
公开(公告)号：US10033297B2
公开(公告)日：2018-07-24
申请号：US15379007
申请日：2016-12-14
Applicant: Infineon Technologies AG
Inventor： Albino Pidutti , Damiano Gadler , Ioannis Pachnis
CPC classification number: H02M7/217 , H01L27/0676 , H01L29/7395 , H01L29/7802
Abstract: A rectifier is described herein. According to one example, the rectifier includes a semiconductor substrate and further includes an anode terminal and a cathode terminal connected by a load current path of a first MOS transistor and a diode that is connected parallel to a load current path. An alternating input voltage is operably applied between the anode terminal and the cathode terminal. Further, the rectifier includes a control circuit that is configured to switch the first MOS transistor on for an on-time period, during which the diode is forward biased. The first MOS transistor, the diode, and the control circuit are integrated in the semiconductor substrate.
-
公开(公告)号：US10547250B2
公开(公告)日：2020-01-28
申请号：US16425641
申请日：2019-05-29
Applicant: Infineon Technologies AG
Inventor： Albino Pidutti , Damiano Gadler , Ioannis Pachnis
IPC: H02M7/219
Abstract: A rectifier device is described herein. In accordance with one embodiment, the rectifier device includes a semiconductor body doped with dopants of a first doping type and one or more well regions arranged in the semiconductor body and doped with dopants of a second doping type. Thereby, the one or more well regions and the surrounding semiconductor body form a pn-junction. The rectifier device further includes an anode terminal and a cathode terminal connected by a load current path of a first MOS transistor and a diode, which is parallel to the load current path. An alternating input voltage is applied between the anode terminal and the cathode terminal during operation of the rectifier device. The rectifier device includes a control circuit that is configured to switch on the first MOS transistor for an on-time period, during which the diode is forward biased, wherein the first MOS transistor and the diode are integrated in the semiconductor body and the control circuit is at least partly arranged in the one or more well regions. Further, the rectifier device includes a switching circuit that is configured to electrically connect a first well region of the one or more well regions with the anode terminal, as long as the alternating input voltage is above a threshold value, and, to pull the voltage of first well region towards the alternating input voltage, as long as the alternating input voltage is at or below the threshold value.
-
公开(公告)号：US20190372476A1
公开(公告)日：2019-12-05
申请号：US16425718
申请日：2019-05-29
Applicant: Infineon Technologies AG
Inventor： Albino Pidutti , Damiano Gadler , Ioannis Pachnis
Abstract: A rectifier device is described herein. In accordance with one embodiment, the rectifier device includes a semiconductor body doped with dopants of a first doping type and one or more well regions arranged in the semiconductor body and doped with dopants of a second doping type. Thus, the one or more well regions and the surrounding semiconductor body form a pn-junction. The rectifier device includes an anode terminal and a cathode terminal connected by a load current path of a first MOS transistor and a diode, which is connected parallel to the load current path. During operation, an alternating input voltage is applied between the anode terminal and the cathode terminal. The rectifier device includes a control circuit that is configured to switch on the first MOS transistor for an on-time period, during which the diode is forward biased. The first MOS transistor and the diode are integrated in the semiconductor body, and the control circuit is at least partly arranged in the one or more well regions. The rectifier device further includes a controllable resistance circuit that is electrically connected between the semiconductor body and a first well region of the one or more well regions and configured to provide a resistive current path between the semiconductor body and the first well region. The resistance of the current path is dependent on the instantaneous level of the alternating input voltage.
-
公开(公告)号：US20190334451A1
公开(公告)日：2019-10-31
申请号：US16363872
申请日：2019-03-25
Applicant: Infineon Technologies AG
Inventor： Albino Pidutti , Damiano Gadler , Ioannis Pachnis
IPC: H02M7/219 , G05F3/26 , G01R19/165
Abstract: A rectifier device includes a first transistor having a load current path and a diode connected in parallel to the load current path between an anode terminal and a cathode terminal. An alternating input voltage is operably applied between the anode terminal and the cathode terminal. A control circuit is coupled to a gate terminal of the first transistor and configured to switch the first transistor on for an on-time period, during which the diode is forward biased. A clamping circuit is coupled to the gate terminal of the first transistor and configured to at least partly switch on the first transistor while the diode is reverse biased and when the level of the alternating input voltage reaches a clamping voltage. The clamping circuit includes an additional circuit coupled between the cathode terminal and the gate terminal and configured to provide a voltage dependent on a load current.
-
公开(公告)号：US20180166971A1
公开(公告)日：2018-06-14
申请号：US15379055
申请日：2016-12-14
Applicant: Infineon Technologies AG
Inventor： Albino Pidutti , Damiano Gadler , Herbert Gietler , Michael Lenz , Yavuz Kilic , Ioannis Pachnis
CPC classification number: H02M1/32 , H01L29/1095 , H01L29/7813 , H02M1/08 , H02M7/217 , H02M7/219
Abstract: A rectifier is described herein. According to one example, the rectifier includes a semiconductor substrate and further includes an anode terminal and a cathode terminal connected by a load current path of a first MOS transistor and a diode that is connected parallel to a load current path. An alternating input voltage is operably applied between the anode terminal and the cathode terminal. Further, the rectifier includes a control circuit that is configured to switch the first MOS transistor on for an on-time period, during which the diode is forward biased. The first MOS transistor, the diode, and the control circuit are integrated in the semiconductor substrate.
-
-
-
-
-
-
-
-
-
Search Results
10
records
(took 0.014 seconds)
