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公开(公告)号：US20200274528A1
公开(公告)日：2020-08-27
申请号：US16799141
申请日：2020-02-24
Applicant: Infineon Technologies AG
Inventor： Michael Lenz , Damiano Gadler , Ioannis Pachnis , Albino Pidutti
IPC: H03K17/042 , H03K17/16 , H01L27/06 , H02M3/158
Abstract: An integrated circuit includes a transistor having a control electrode and a load current path to activate and to deactivate a load current path between a first terminal and a second terminal. A diode is in parallel with the load current path of the transistor. The integrated circuit includes a detector circuit to generate a control signal depending on a voltage between the first terminal and the second terminal. The integrated circuit includes a driver circuit having a main branch and a first feedforward branch. The main branch includes circuit components to generate a control voltage for the control electrode of the transistor in accordance with the control signal, and the feedforward branch comprises circuit components to generate a charging current or, alternatively, a discharging current as a reaction to a slope of the control signal, the current charging or discharging, respectively, the control electrode of the transistor.
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公开(公告)号：US10516343B2
公开(公告)日：2019-12-24
申请号：US15446568
申请日：2017-03-01
Applicant: Infineon Technologies AG
Inventor： Juergen Kositza , Herbert Gietler , Harald Huber , Michael Lenz
Abstract: A power semiconductor package includes a reference voltage terminal, a supply voltage terminal, a phase terminal, a first power transistor and a second power transistor. The first power transistor and the second power transistor are connected in series and form a low side switch and a high side switch of a half bridge circuit.
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公开(公告)号：US20180167000A1
公开(公告)日：2018-06-14
申请号：US15378945
申请日：2016-12-14
Applicant: Infineon Technologies AG
Inventor： Albino Pidutti , Damiano Gadler , Herbert Gietler , Michael Lenz
Abstract: A rectifier device is described herein. In accordance with one example, the rectifier device includes a transistor that has a load current path and a diode connected parallel to the load current path. The diode and the load current path are connected between an anode terminal and a cathode terminal; an alternating input voltage is operably applied between the anode terminal and the cathode terminal. A control circuit is coupled to a gate terminal of the transistor and configured to switch the semiconductor switch on for an on-time period, during which the diode is forward biased. Moreover, a clamping circuit is coupled to a gate terminal of the transistor and configured to at least partly switch on the transistor, while the diode is reverse biased and the level of the alternating input voltage reaches a clamping voltage.
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公开(公告)号：US09379695B2
公开(公告)日：2016-06-28
申请号：US14142978
申请日：2013-12-30
Applicant: Infineon Technologies AG
Inventor： Michael Lenz
IPC: H03K17/06 , H03K5/12 , H03K5/02 , H03K17/0412 , H03K17/16
CPC classification number: H03K17/063 , H03K5/023 , H03K17/04123 , H03K17/165
Abstract: A circuit for operating a half-bridge is provided. The circuit may include a first multiplier circuit. The first multiplier circuit may be configured to multiply a first signal by a first factor to provide a turn-on signal. The turn-on signal may be configured to turn a first switch of the half-bridge on. The first multiplier circuit may be further configured to multiply the first signal by a second factor to provide a turn-off signal. The turn-off signal may be configured to turn a second switch of the half-bridge off. The first factor and the second factor may be chosen so that the second switch is turned off before the first switch is turned on.
Abstract translation: 提供了用于操作半桥的电路。 电路可以包括第一乘法器电路。 第一乘法器电路可以被配置为将第一信号乘以第一因子以提供导通信号。 导通信号可以被配置为使半桥的第一开关导通。 第一乘法器电路还可以被配置为将第一信号乘以第二因子以提供关断信号。 关断信号可以被配置为使半桥的第二开关断开。 可以选择第一因素和第二因素，使得第二开关在第一开关接通之前被断开。
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公开(公告)号：US20160072376A1
公开(公告)日：2016-03-10
申请号：US14849655
申请日：2015-09-10
Applicant: Infineon Technologies AG
Inventor： Dirk Ahlers , Frank Auer , Herbert Gietler , Michael Lenz
CPC classification number: H02M1/08 , H01L27/0207 , H01L27/0733 , H02K11/046 , H02M7/217 , H02M7/219 , H02M2001/0048 , H02M2007/2195 , Y02B70/1408
Abstract: A rectifying device includes a power transistor, a gate control circuit and a capacitor structure arranged on a single semiconductor die. The power transistor includes a source or emitter terminal connected to a first terminal of the rectifying device, a drain or collector terminal connected to a second terminal of the rectifying device, and a gate. The gate control circuit is operable to control a gate voltage at the gate of the power transistor based on at least one parameter relating to at least one of a voltage and a current between the first terminal and the second terminal.
Abstract translation: 整流装置包括布置在单个半导体管芯上的功率晶体管，栅极控制电路和电容器结构。 功率晶体管包括连接到整流装置的第一端子的源极或发射极端子，连接到整流装置的第二端子的漏极或集电极端子以及栅极。 栅极控制电路可操作以基于与第一端子和第二端子之间的电压和电流中的至少一个有关的至少一个参数来控制功率晶体管的栅极处的栅极电压。
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Patent Agency Ranking
公开(公告)号：US10026574B2
公开(公告)日：2018-07-17
申请号：US13846349
申请日：2013-03-18
Applicant: Infineon Technologies AG
Inventor： Michael Lenz , Rolf-Peter Goeser , Cristi-Stefan Zegheru
IPC: H01H47/32
Abstract: A circuit arrangement includes a first number of loads connected in series. Each of a second number of drive units is coupled to at least one of the first number of loads, and is configured to assume a first operation state or a second operation state. A current source circuit is coupled in series with the first number of loads and is configured to control a load current.
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公开(公告)号：US20150188532A1
公开(公告)日：2015-07-02
申请号：US14142978
申请日：2013-12-30
Applicant: Infineon Technologies AG
Inventor： Michael Lenz
CPC classification number: H03K17/063 , H03K5/023 , H03K17/04123 , H03K17/165
Abstract: A circuit for operating a half-bridge is provided. The circuit may include a first multiplier circuit. The first multiplier circuit may be configured to multiply a first signal by a first factor to provide a turn-on signal. The turn-on signal may be configured to turn a first switch of the half-bridge on. The first multiplier circuit may be further configured to multiply the first signal by a second factor to provide a turn-off signal. The turn-off signal may be configured to turn a second switch of the half-bridge off. The first factor and the second factor may be chosen so that the second switch is turned off before the first switch is turned on.
Abstract translation: 提供了用于操作半桥的电路。 电路可以包括第一乘法器电路。 第一乘法器电路可以被配置为将第一信号乘以第一因子以提供导通信号。 导通信号可以被配置为使半桥的第一开关导通。 第一乘法器电路还可以被配置为将第一信号乘以第二因子以提供关断信号。 关断信号可以被配置为使半桥的第二开关断开。 可以选择第一因素和第二因素，使得第二开关在第一开关接通之前被断开。
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公开(公告)号：US10381919B2
公开(公告)日：2019-08-13
申请号：US15379055
申请日：2016-12-14
Applicant: Infineon Technologies AG
Inventor： Albino Pidutti , Damiano Gadler , Herbert Gietler , Michael Lenz , Yavuz Kilic , Ioannis Pachnis
Abstract: A rectifier is described herein. According to one example, the rectifier includes a semiconductor substrate and further includes an anode terminal and a cathode terminal connected by a load current path of a first MOS transistor and a diode that is connected parallel to a load current path. An alternating input voltage is operably applied between the anode terminal and the cathode terminal. Further, the rectifier includes a control circuit that is configured to switch the first MOS transistor on for an on-time period, during which the diode is forward biased. The first MOS transistor, the diode, and the control circuit are integrated in the semiconductor substrate.
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公开(公告)号：US20180166971A1
公开(公告)日：2018-06-14
申请号：US15379055
申请日：2016-12-14
Applicant: Infineon Technologies AG
Inventor： Albino Pidutti , Damiano Gadler , Herbert Gietler , Michael Lenz , Yavuz Kilic , Ioannis Pachnis
CPC classification number: H02M1/32 , H01L29/1095 , H01L29/7813 , H02M1/08 , H02M7/217 , H02M7/219
Abstract: A rectifier is described herein. According to one example, the rectifier includes a semiconductor substrate and further includes an anode terminal and a cathode terminal connected by a load current path of a first MOS transistor and a diode that is connected parallel to a load current path. An alternating input voltage is operably applied between the anode terminal and the cathode terminal. Further, the rectifier includes a control circuit that is configured to switch the first MOS transistor on for an on-time period, during which the diode is forward biased. The first MOS transistor, the diode, and the control circuit are integrated in the semiconductor substrate.
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公开(公告)号：US09793809B1
公开(公告)日：2017-10-17
申请号：US15294188
申请日：2016-10-14
Applicant: Infineon Technologies AG
Inventor： Michael Lenz , Cristian Garbossa , Marco Piselli
CPC classification number: H02M3/158 , H02H3/202 , H02H7/1213 , H02M1/32 , H02M2001/007
Abstract: In one example, a circuit includes a first voltage converter and a second voltage converter. The first voltage converter is configured to convert a first voltage to a second voltage, determine whether the first voltage converter is operating in an unsafe state, and output an indication that the first voltage converter is operating in the unsafe state. The second voltage converter is configured to selectively activate a high side switch and a low side switch to convert the second voltage to a third voltage. In response to receiving the indication that the first voltage converter is operating in the unsafe state, the second voltage converter is further configured to activate the high side switch and the low side switch to establish an electrical path between the second voltage and a reference node of the circuit.
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