公开(公告)号：US10692824B2

公开(公告)日：2020-06-23

申请号：US16173702

申请日：2018-10-29

Applicant: Infineon Technologies AG

Inventor： Rudolf Lachner ,  Linus Maurer ,  Maciej Wojnowski

IPC: H01L23/66 ,  H01Q9/04 ,  H01L23/31 ,  H01L23/00 ,  H01Q1/22

Abstract: A semiconductor radar module includes an integrated circuit (IC) radar device embedded within a wafer level package compound layer, the wafer level package compound layer extending at least partially lateral to the IC radar device. An interface layer abutting the wafer level package compound layer comprises a redistribution layer coupled to the IC radar device for connecting the IC radar device externally. An underfill material extends between the interface layer and an external substrate and abuts the interface layer and the external substrate. The interface layer is disposed between the wafer level package compound layer and the underfill material.

公开(公告)号：US20160240495A1

公开(公告)日：2016-08-18

申请号：US15137594

申请日：2016-04-25

Applicant: Infineon Technologies AG

Inventor： Rudolf Lachner ,  Linus Maurer ,  Maciej Wojnowski

IPC: H01L23/66

CPC classification number: H01L23/66 ,  H01L23/3128 ,  H01L23/3135 ,  H01L24/12 ,  H01L24/19 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2223/6677 ,  H01L2223/6683 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2924/01005 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18162 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/351 ,  H01Q1/2283 ,  H01Q9/0407 ,  H01Q9/045 ,  H01Q9/0457 ,  H01L2924/00

Abstract: A semiconductor module comprises an integrated circuit device, the IC device embedded in a compound material, wherein the compound material at least partially extends lateral to the IC device. The semiconductor module further comprises interconnect structures arranged lateral to the IC device to provide at least one external electrical contact; a patch antenna structure integrated in the semiconductor module and electrically connected to the IC device and a layer interfacing the IC device and the compound, wherein the layer comprises first and second planar metal structures coupled to the IC device, wherein the first planar metal structure is electrically connected to the IC device and the interconnect structures and wherein the second planar metal structure is electrically connected to the IC device and the patch antenna structure.

Abstract translation: 半导体模块包括集成电路器件，嵌入复合材料中的IC器件，其中复合材料至少部分地延伸到IC器件的侧面。 半导体模块还包括布置在IC器件侧面的互连结构以提供至少一个外部电触点; 集成在半导体模块中并且电连接到IC器件的贴片天线结构和与IC器件和化合物接口的层，其中该层包括耦合到IC器件的第一和第二平面金属结构，其中第一平面金属结构是 电连接到IC器件和互连结构，并且其中第二平面金属结构电连接到IC器件和贴片天线结构。

公开(公告)号：US08460967B2

公开(公告)日：2013-06-11

申请号：US13622058

申请日：2012-09-18

Applicant: Infineon Technologies AG

Inventor： Rudolf Lachner ,  Linus Maurer ,  Maciej Wojnowski

IPC: H01L21/60 ,  H01L21/56

CPC classification number: H01L23/66 ,  H01L23/3128 ,  H01L23/3135 ,  H01L24/12 ,  H01L24/19 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2223/6677 ,  H01L2223/6683 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2924/01005 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18162 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/351 ,  H01Q1/2283 ,  H01Q9/0407 ,  H01Q9/045 ,  H01Q9/0457 ,  H01L2924/00

Abstract: A semiconductor module comprises components in one wafer level package. The module comprises an integrated circuit (IC) chip embedded within a package molding compound. The package comprises a molding compound package layer coupled to an interface layer for integrating an antenna structure and a bonding interconnect structure to the IC chip. The bonding interconnect structure comprises three dimensional interconnects. The antenna structure and bonding interconnect structure are coupled to the IC chip and integrated within the interface layer in the same wafer fabrication process.

Abstract translation: 半导体模块包括一个晶片级封装中的部件。 该模块包括嵌入在封装模塑料中的集成电路（IC）芯片。 该封装包括耦合到界面层的成型复合封装层，用于将天线结构和接合互连结构集成到IC芯片。 接合互连结构包括三维互连。 天线结构和接合互连结构在相同的晶片制造过程中耦合到IC芯片并且集成在界面层内。

公开(公告)号：US20130017653A1

公开(公告)日：2013-01-17

申请号：US13622058

申请日：2012-09-18

Applicant: Infineon Technologies AG

Inventor： Rudolf Lachner ,  Linus Maurer ,  Maciej Wojnowski

IPC: H01L21/60 ,  H01L21/56

CPC classification number: H01L23/66 ,  H01L23/3128 ,  H01L23/3135 ,  H01L24/12 ,  H01L24/19 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2223/6677 ,  H01L2223/6683 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2924/01005 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18162 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/351 ,  H01Q1/2283 ,  H01Q9/0407 ,  H01Q9/045 ,  H01Q9/0457 ,  H01L2924/00

Abstract: A semiconductor module comprises components in one wafer level package. The module comprises an integrated circuit (IC) chip embedded within a package molding compound. The package comprises a molding compound package layer coupled to an interface layer for integrating an antenna structure and a bonding interconnect structure to the IC chip. The bonding interconnect structure comprises three dimensional interconnects. The antenna structure and bonding interconnect structure are coupled to the IC chip and integrated within the interface layer in the same wafer fabrication process.

Abstract translation: 半导体模块包括一个晶片级封装中的部件。 该模块包括嵌入在封装模塑料中的集成电路（IC）芯片。 该封装包括耦合到界面层的成型复合封装层，用于将天线结构和接合互连结构集成到IC芯片。 接合互连结构包括三维互连。 天线结构和接合互连结构在相同的晶片制造过程中耦合到IC芯片并且集成在界面层内。

公开(公告)号：US20190067223A1

公开(公告)日：2019-02-28

申请号：US16173702

申请日：2018-10-29

Applicant: Infineon Technologies AG

Inventor： Rudolf Lachner ,  Linus Maurer ,  Maciej Wojnowski

IPC: H01L23/66 ,  H01Q9/04 ,  H01L23/31 ,  H01L23/00 ,  H01Q1/22

CPC classification number: H01L23/66 ,  H01L23/3128 ,  H01L23/3135 ,  H01L24/12 ,  H01L24/19 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2223/6677 ,  H01L2223/6683 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2924/01005 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18162 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/351 ,  H01Q1/2283 ,  H01Q9/0407 ,  H01Q9/045 ,  H01Q9/0457 ,  H01L2924/00

Abstract: A semiconductor radar module includes an integrated circuit (IC) radar device embedded within a wafer level package compound layer, the wafer level package compound layer extending at least partially lateral to the IC radar device. An interface layer abutting the wafer level package compound layer comprises a redistribution layer coupled to the IC radar device for connecting the IC radar device externally. An underfill material extends between the interface layer and an external substrate and abuts the interface layer and the external substrate. The interface layer is disposed between the wafer level package compound layer and the underfill material.

公开(公告)号：US10121751B2

公开(公告)日：2018-11-06

申请号：US15137594

申请日：2016-04-25

Applicant: Infineon Technologies AG

Inventor： Rudolf Lachner ,  Linus Maurer ,  Maciej Wojnowski

IPC: H01L23/66 ,  H01Q1/22 ,  H01Q9/04 ,  H01L23/00 ,  H01L23/31

Abstract: A semiconductor module comprises an integrated circuit device, the IC device embedded in a compound material, wherein the compound material at least partially extends lateral to the IC device. The semiconductor module further comprises interconnect structures arranged lateral to the IC device to provide at least one external electrical contact; a patch antenna structure integrated in the semiconductor module and electrically connected to the IC device and a layer interfacing the IC device and the compound, wherein the layer comprises first and second planar metal structures coupled to the IC device, wherein the first planar metal structure is electrically connected to the IC device and the interconnect structures and wherein the second planar metal structure is electrically connected to the IC device and the patch antenna structure.

公开(公告)号：US09349696B2

公开(公告)日：2016-05-24

申请号：US14148585

申请日：2014-01-06

Applicant: Infineon Technologies AG

Inventor： Rudolf Lachner ,  Linus Maurer ,  Maciej Wojnowski

IPC: H01L23/66 ,  H01Q1/22 ,  H01Q9/04 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L23/66 ,  H01L23/3128 ,  H01L23/3135 ,  H01L24/12 ,  H01L24/19 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2223/6677 ,  H01L2223/6683 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2924/01005 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18162 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/351 ,  H01Q1/2283 ,  H01Q9/0407 ,  H01Q9/045 ,  H01Q9/0457 ,  H01L2924/00

Abstract: A semiconductor module comprises a wafer package comprising an integrated circuit (IC) device embedded within the wafer package and a layer comprising at least one antenna structure and redistribution structures, wherein the antenna structure is coupled to the IC device and wherein the redistribution structures are coupled to the IC device.

Abstract translation: 半导体模块包括晶片封装，其包括嵌入在晶片封装内的集成电路（IC）器件和包括至少一个天线结构和再分配结构的层，其中天线结构耦合到IC器件，并且其中再分配结构耦合 到IC设备。

公开(公告)号：US08624381B2

公开(公告)日：2014-01-07

申请号：US13849034

申请日：2013-03-22

Applicant: Infineon Technologies AG

Inventor： Rudolf Lachner ,  Linus Maurer ,  Maciej Wojnowski

IPC: H01L23/00

CPC classification number: H01L23/66 ,  H01L23/3128 ,  H01L23/3135 ,  H01L24/12 ,  H01L24/19 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2223/6677 ,  H01L2223/6683 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2924/01005 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18162 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/351 ,  H01Q1/2283 ,  H01Q9/0407 ,  H01Q9/045 ,  H01Q9/0457 ,  H01L2924/00

Abstract: A semiconductor module, comprises a package molding compound layer comprising an integrated circuit (IC) device embedded within a package molding compound, the integrated circuit device and the package molding compound having a common surface. Structures are formed to connect the semiconductor module to an external board, the structures electrically connected to the integrated circuit device. A layer is formed on the common surface, the layer comprising at least one integrated antenna structure, the integrated antenna structure being coupled to the IC device.

Abstract translation: 半导体模块包括封装模制化合物层，其包含嵌入封装模塑料中的集成电路（IC）器件，集成电路器件和具有共同表面的封装模塑料。 形成结构以将半导体模块连接到外部板，该结构电连接到集成电路器件。 在公共表面上形成一个层，该层包括至少一个集成天线结构，该集成天线结构耦合到该IC器件。