公开(公告)号：US20160268498A1

公开(公告)日：2016-09-15

申请号：US15069370

申请日：2016-03-14

Applicant: Infineon Technologies AG

Inventor： Markus ECKINGER ,  Stefan KOLB

IPC: H01L43/04 ,  G01R33/00 ,  G01R33/07 ,  H01L43/06 ,  H01L43/14

CPC classification number: H01L43/04 ,  G01R33/0052 ,  G01R33/07 ,  H01L43/065 ,  H01L43/14

Abstract: Methods for doping an active Hall effect region of a Hall effect device in a semiconductor substrate, and Hall effect devices having a doped active Hall effect region are provided. A method includes forming a first doping profile of a first doping type in a first depth region of the active Hall effect region by means of a first implantation with a first implantation energy level, forming a second doping profile of the first doping type in a second depth region of the active Hall effect region by means of a second implantation with a second implantation energy level, and forming an overall doping profile of the active Hall effect region by annealing the semiconductor substrate with the active Hall effect region having the first and the second doping profile.

Abstract translation: 在半导体衬底中掺杂霍尔效应器件的有源霍尔效应区域的方法以及具有掺杂的有源霍尔效应区域的霍尔效应器件。 一种方法包括通过具有第一注入能级的第一注入，在有源霍尔效应区的第一深度区域中形成第一掺杂类型的第一掺杂分布，在第二掺杂分布中形成第一掺杂类型的第二掺杂分布 通过具有第二注入能级的第二注入，激活霍尔效应区的深度区域，并且通过用具有第一和第二的有源霍尔效应区域退火半导体衬底来形成有源霍尔效应区的整体掺杂分布 掺杂型材

公开(公告)号：US20230102575A1

公开(公告)日：2023-03-30

申请号：US17934057

申请日：2022-09-21

Applicant: Infineon Technologies AG

Inventor： Daniel KÖHLER ,  Vlad BUICULESCU ,  Florian BRANDL ,  Dirk MEINHOLD ,  Erhard LANDGRAF ,  Rainer Markus SCHALLER ,  Markus ECKINGER

IPC: G01L19/00 ,  G01P1/00 ,  G01P15/08 ,  B60L58/10

Abstract: A sensor for parallel measurement of pressure and acceleration of a vehicle, including a substrate, a sensor element disposed on the substrate, a material being connected with the sensor element and being exposed to the environment of the sensor, wherein the material is configured to act as a seismic mass, and an electronic circuitry connected with the sensor element and including a first filter and a second filter, wherein the first and second filters have different filter characteristics so that an output of the first filter is representative for the pressure and an output of the second is representative for the acceleration.

公开(公告)号：US20210148776A1

公开(公告)日：2021-05-20

申请号：US17159492

申请日：2021-01-27

Applicant: Infineon Technologies AG

Inventor： Markus ECKINGER ,  Dirk HAMMERSCHMIDT ,  Florian BRANDL ,  Bernhard WINKLER

IPC: G01L9/00 ,  B81B3/00 ,  B81C3/00

Abstract: A pressure sensor is provided. The pressure sensor includes a magnetic sensor element configured to generate a signal based on a magnetic field sensed by the magnetic sensor element; a microelectromechanical system (MEMS) structure including a membrane configured to move, depending on a pressure applied thereto, relative to the magnetic sensor element; and a field influencing element configured to modify the magnetic field based on a movement of the membrane, wherein the field influencing element is arranged on the membrane.

公开(公告)号：US20180335359A1

公开(公告)日：2018-11-22

申请号：US15976111

申请日：2018-05-10

Applicant: Infineon Technologies AG

Inventor： Markus ECKINGER ,  Dirk HAMMERSCHMIDT ,  Florian BRANDL ,  Bernhard WINKLER

IPC: G01L9/00 ,  B81B3/00 ,  B81C3/00

Abstract: A pressure sensor is provided. The pressure sensor includes at least two electrodes and an integrated circuit configured to sense a capacitance between the at least two electrodes. Further, the pressure sensor includes a Microelectromechanical System (MEMS) structure including a conductive or dielectric membrane configured to move, depending on the pressure, relative to the at least two electrodes.

公开(公告)号：US20170317271A1

公开(公告)日：2017-11-02

申请号：US15652579

申请日：2017-07-18

Applicant: Infineon Technologies AG

Inventor： Markus ECKINGER ,  Stefan KOLB

IPC: H01L43/04 ,  H01L43/06 ,  G01R33/07 ,  H01L43/14 ,  G01R33/00

CPC classification number: H01L43/04 ,  G01R33/0052 ,  G01R33/07 ,  H01L43/065 ,  H01L43/14

Abstract: Methods for doping an active Hall effect region of a Hall effect device in a semiconductor substrate, and Hall effect devices having a doped active Hall effect region are provided. A method includes forming a first doping profile of a first doping type in a first depth region of the active Hall effect region by means of a first implantation with a first implantation energy level, forming a second doping profile of the first doping type in a second depth region of the active Hall effect region by means of a second implantation with a second implantation energy level, and forming an overall doping profile of the active Hall effect region by annealing the semiconductor substrate with the active Hall effect region having the first and the second doping profile.