公开(公告)号：US20240371796A1

公开(公告)日：2024-11-07

申请号：US18774379

申请日：2024-07-16

Applicant: Infineon Technologies AG

Inventor： Harry Walter SAX ,  Johann GATTERBAUER ,  Wolfgang LEHNERT ,  Evelyn NAPETSCHNIG ,  Michael ROGALLI

IPC: H01L23/00 ,  H01L21/56 ,  H01L23/31

Abstract: A chip package is provided. The chip package may include at least one chip, an exposed metal region and a metal protection layer structure over the exposed metal region and configured to protect the metal region from oxidation. The protection layer structure includes a low-temperature deposited oxide, and a hydrothermally converted metal oxide layer over the protection layer structure.

公开(公告)号：US20210375792A1

公开(公告)日：2021-12-02

申请号：US17333186

申请日：2021-05-28

Applicant: Infineon Technologies AG

Inventor： Harry Walter SAX ,  Johann GATTERBAUER ,  Wolfgang LEHNERT ,  Evelyn NAPETSCHNIG ,  Michael ROGALLI

IPC: H01L23/00 ,  H01L21/56 ,  H01L23/31

Abstract: A chip package is provided. The chip package may include at least one chip, an exposed metal region and a metal protection layer structure over the exposed metal region and configured to protect the metal region from oxidation. The protection layer structure includes a low-temperature deposited oxide, and a hydrothermally converted metal oxide layer over the protection layer structure.

公开(公告)号：US20230395532A1

公开(公告)日：2023-12-07

申请号：US18236858

申请日：2023-08-22

Applicant: Infineon Technologies AG

Inventor： Harry Walter SAX ,  Johann GATTERBAUER ,  Wolfgang LEHNERT ,  Evelyn NAPETSCHNIG ,  Michael ROGALLI

IPC: H01L23/00 ,  H01L23/31 ,  H01L21/56

CPC classification number: H01L23/564 ,  H01L24/05 ,  H01L24/03 ,  H01L23/3142 ,  H01L21/56 ,  H01L2924/365 ,  H01L2224/05687 ,  H01L2224/0382

Abstract: A chip package is provided. The chip package may include at least one chip, an exposed metal region and a metal protection layer structure over the exposed metal region and configured to protect the metal region from oxidation. The protection layer structure includes a low-temperature deposited oxide, and a hydrothermally converted metal oxide layer over the protection layer structure.