公开(公告)号：US20230083106A1

公开(公告)日：2023-03-16

申请号：US17476829

申请日：2021-09-16

Applicant: Infineon Technologies AG

Inventor： Moriz JELINEK ,  Paul ELLINGHAUS ,  Axel KOENIG ,  Caspar LEENDERTZ ,  Hans-Joachim SCHULZE ,  Werner SCHUSTEREDER

IPC: H01L21/04 ,  H01L29/16 ,  H01L29/04

Abstract: A method includes orienting a silicon carbide layer to a first crystal channel direction relative to a first ion beam and implanting phosphorous into the silicon carbide layer using the first ion beam to define a first doped region in the silicon carbide layer. A deviation angle between the first crystal channel direction and the first ion beam is less than ±1° and the first crystal channel direction comprises a direction or a direction.

公开(公告)号：US20240096934A1

公开(公告)日：2024-03-21

申请号：US17945467

申请日：2022-09-15

Applicant: Infineon Technologies AG

Inventor： Paul ELLINGHAUS ,  Sandeep Walia

IPC: H01L29/06 ,  H01L21/04 ,  H01L29/10 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/063 ,  H01L21/0465 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7813

Abstract: According to some embodiments, a method for manufacturing a semiconductor device is provided. One or more first implantation processes are performed to form an implanted region, of a first conductivity type, in a semiconductor body. A trench is formed in the semiconductor body. After forming the trench, a second implantation process is performed to form a current spread region, of a second conductivity type, in the semiconductor body. The second implantation process includes implanting first dopants, through a top surface of the semiconductor body, to form a first portion of the current spread region, and implanting second dopants, through a bottom of the trench, to form a second portion of the current spread region. A gate structure is formed in the trench. A vertical position of the first portion of the current spread region matches a vertical position of the gate structure. The second portion of the current spread region underlies the gate structure.