公开(公告)号：US20210032097A1

公开(公告)日：2021-02-04

申请号：US17076250

申请日：2020-10-21

Applicant: Infineon Technologies AG

Inventor： Florian BRANDL ,  Christian GEISSLER ,  Robert GRUENBERGER ,  Claus WAECHTER ,  Bernhard WINKLER

IPC: B81B7/00 ,  B81C1/00 ,  G01L1/18 ,  G01L1/14

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.

公开(公告)号：US20240196757A1

公开(公告)日：2024-06-13

申请号：US18526239

申请日：2023-12-01

Applicant: Infineon Technologies AG

Inventor： Horst THEUSS ,  Christian GEISSLER ,  Rainer Markus SCHALLER ,  Walter HARTNER

IPC: H10N50/10 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31

CPC classification number: H10N50/10 ,  H01L21/561 ,  H01L23/3157 ,  H01L24/20 ,  H01L24/96 ,  H01L2224/214 ,  H01L2224/215 ,  H01L2224/96

Abstract: A fan-out wafer-level package contains a magnetic field sensor chip and an encapsulation material which at least partially encapsulates the magnetic field sensor chip. Further, the fan-out wafer-level package contains an external electrical contact element formed by a planar solderable metal coating, and an electrical redistribution layer arranged over the encapsulation material and electrically interconnecting the magnetic field sensor chip and the external electrical contact element.

公开(公告)号：US20190198455A1

公开(公告)日：2019-06-27

申请号：US16227427

申请日：2018-12-20

Applicant: Infineon Technologies AG

Inventor： Walter HARTNER ,  Christian GEISSLER ,  Thomas KILGER ,  Johannes LODERMEYER ,  Franz-Xaver MUEHLBAUER ,  Martin Richard NIESSNER ,  Claus WAECHTER

IPC: H01L23/00 ,  H01L23/66 ,  H01L23/31 ,  H01L21/56 ,  H01Q1/22

CPC classification number: H01L23/562 ,  H01L21/563 ,  H01L23/3157 ,  H01L23/66 ,  H01L2223/6677 ,  H01Q1/2283

Abstract: A semiconductor apparatus comprises: a circuit board; a semiconductor package having a main surface, wherein the semiconductor package is arranged on the circuit board and the main surface faces the circuit board; a radio-frequency line element of the semiconductor package, which radio-frequency line element is arranged on the main surface or inside the semiconductor package, wherein the radio-frequency line element is designed to transmit a signal at a frequency of greater than 10 GHz; and an underfiller material arranged between the circuit board and the semiconductor package, wherein the radio-frequency line element and the underfiller material do not overlap in an orthogonal projection onto the main surface.

公开(公告)号：US20220247089A1

公开(公告)日：2022-08-04

申请号：US17648730

申请日：2022-01-24

Applicant: Infineon Technologies AG

Inventor： Walter HARTNER ,  Tuncay ERDOEL ,  Klaus ELIAN ,  Christian GEISSLER ,  Bernhard RIEDER ,  Rainer Markus SCHALLER ,  Horst THEUSS ,  Maciej WOJNOWSKI

IPC: H01Q21/00 ,  H01Q1/52 ,  H01Q1/38 ,  H01Q1/16

Abstract: A radio-frequency device comprises a printed circuit board and a radio-frequency package having a radio-frequency chip and a radio-frequency radiation element, the radio-frequency package being mounted on the printed circuit board. The radio-frequency device furthermore comprises a waveguide component having a waveguide, wherein the radio-frequency radiation element is configured to radiate transmission signals into the waveguide and/or to receive reception signals via the waveguide. The radio-frequency device furthermore comprises a gap arranged between a first side of the radio-frequency package and a second side of the waveguide component, and a shielding structure, which is configured: to permit a relative movement between the radio-frequency package and the waveguide component in a first direction perpendicular to the first side of the radio-frequency package, and to shield the transmission signals and/or the reception signals in such a way that a propagation of the signals via the gap is attenuated or prevented.

公开(公告)号：US20200331748A1

公开(公告)日：2020-10-22

申请号：US16387918

申请日：2019-04-18

Applicant: Infineon Technologies AG

Inventor： Florian BRANDL ,  Christian GEISSLER ,  Robert GRUENBERGER ,  Claus WAECHTER ,  Bernhard WINKLER

IPC: B81B7/00 ,  B81C1/00 ,  G01L1/18 ,  G01L1/14

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.

公开(公告)号：US20200006174A1

公开(公告)日：2020-01-02

申请号：US16447610

申请日：2019-06-20

Applicant: Infineon Technologies AG

Inventor： Christian GEISSLER ,  Walter Hartner ,  Claus Waechter ,  Maciej Wojnowski

IPC: H01L23/31 ,  H01L21/56

Abstract: A method comprises providing a least one semiconductor component, wherein each of the at least one semiconductor component comprises: a semiconductor chip, wherein the semiconductor chip comprises a first main surface and a second main surface opposite the first main surface, and a sacrificial layer arranged above the opposite second main surface of the semiconductor chip. The method further comprises encapsulating the at least one semiconductor component with an encapsulation material. The method further comprises removing the sacrificial material, wherein above each of the at least one semiconductor chip a cutout is formed in the encapsulation material. The method further comprises arranging at least one lid above the at least one cutout, wherein a closed cavity is formed by the at least one cutout and the at least one lid above each of the at least one semiconductor chip.