公开(公告)号：US09419623B2

公开(公告)日：2016-08-16

申请号：US14512686

申请日：2014-10-13

Applicant: Infineon Technologies AG

Inventor： Thomas Kuenemund ,  Dennis Tischendorf ,  Uwe Weder

IPC: H01L29/66 ,  H03K19/177 ,  G06F21/55 ,  H01L23/544 ,  H01L27/04 ,  H02H1/00 ,  H01L23/00 ,  H01L23/552 ,  H01L27/144 ,  H01L21/761

CPC classification number: H03K19/17768 ,  G06F21/755 ,  H01L21/761 ,  H01L23/544 ,  H01L23/573 ,  H01L27/04 ,  H01L27/1443 ,  H01L2924/0002 ,  H02H1/00 ,  H01L2924/00

Abstract: A semiconductor component includes a semiconductor substrate, and a doped well having a well terminal and a transistor structure having at least one potential terminal formed in the semiconductor substrate. The transistor structure has a parasitic thyristor, and is at least partly arranged in the doped well. The potential terminal and the well terminal are connected via a resistor.

Abstract translation: 半导体部件包括半导体衬底，以及具有阱端子和晶体管结构的掺杂阱，其具有形成在半导体衬底中的至少一个电位端子。 晶体管结构具有寄生晶闸管，并且至少部分地布置在掺杂阱中。 电位端子和阱端子通过电阻连接。

公开(公告)号：US09552499B2

公开(公告)日：2017-01-24

申请号：US14541258

申请日：2014-11-14

Applicant: Infineon Technologies AG

Inventor： Uwe Weder ,  Thomas Kuenemund

IPC: G06F21/75 ,  G06F21/76 ,  G06F21/55 ,  H01L23/552 ,  H01L23/00

CPC classification number: G06F21/75 ,  G06F21/556 ,  G06F21/755 ,  G06F21/76 ,  H01L23/552 ,  H01L23/576

Abstract: In various embodiments, a circuit arrangement is provided. The circuit arrangement may include a detection circuit, which is designed to detect light attacks on the circuit arrangement; a processing circuit, which is designed to initiate a current flow through a line for each light attack detected by the detection circuit; and a control circuit, which is designed to enable functioning of a component of the circuit arrangement depending on the conducting state of the line.

Abstract translation: 在各种实施例中，提供电路装置。 电路装置可以包括检测电路，其被设计为检测对电路装置的光线攻击; 处理电路，其被设计为启动由检测电路检测到的每个光攻击的线路的电流; 以及控制电路，其被设计成根据线路的导通状态使得电路装置的部件能够起作用。

公开(公告)号：US20150028917A1

公开(公告)日：2015-01-29

申请号：US14512686

申请日：2014-10-13

Applicant: Infineon Technologies AG

Inventor： Thomas Kuenemund ,  Dennis Tischendorf ,  Uwe Weder

IPC: H03K19/177 ,  H01L27/144 ,  H01L23/552

CPC classification number: H03K19/17768 ,  G06F21/755 ,  H01L21/761 ,  H01L23/544 ,  H01L23/573 ,  H01L27/04 ,  H01L27/1443 ,  H01L2924/0002 ,  H02H1/00 ,  H01L2924/00

Abstract: A semiconductor component includes a semiconductor substrate, and a doped well having a well terminal and a transistor structure having at least one potential terminal formed in the semiconductor substrate. The transistor structure has a parasitic thyristor, and is at least partly arranged in the doped well. The potential terminal and the well terminal are connected via a resistor.

Abstract translation: 半导体部件包括半导体衬底，以及具有阱端子和晶体管结构的掺杂阱，其具有形成在半导体衬底中的至少一个电位端子。 晶体管结构具有寄生晶闸管，并且至少部分地布置在掺杂阱中。 电位端子和阱端子通过电阻连接。