Methods and arrangement for creating a highly efficient downstream microwave plasma system
    1.
    发明申请
    Methods and arrangement for creating a highly efficient downstream microwave plasma system 有权
    创建高效下游微波等离子体系统的方法和布置

    公开(公告)号:US20070145020A1

    公开(公告)日:2007-06-28

    申请号:US11317874

    申请日:2005-12-23

    IPC分类号: B23K9/00

    摘要: A plasma generation arrangement configured to provide plasma downstream to a plasma processing chamber. The arrangement includes a microwave waveguide assembly having a longitudinal axis parallel with a first axis. The arrangement also includes a plasma tube assembly intersecting the microwave waveguide assembly. The plasma tube assembly has a longitudinal axis parallel with a second axis that is substantially orthogonal with the first axis. The plasma tube assembly also has a plasma-sustaining region defined by an upstream plurality of plasma traps and a downstream plurality of plasma traps.

    摘要翻译: 等离子体产生装置,其被配置为向等离子体处理室的下游提供等离子体。 该装置包括具有与第一轴平行的纵轴的微波波导组件。 该布置还包括与微波波导组件相交的等离子体管组件。 等离子体管组件具有与第二轴线平行的纵向轴线,该第二轴线基本上与第一轴线正交。 等离子体管组件还具有由上游多个等离子体捕集器和下游多个等离子体捕集器限定的等离子体维持区域。

    Highly Efficient Gas Distribution Arrangement For Plasma Tube Of A Plasma Processing Chamber
    2.
    发明申请
    Highly Efficient Gas Distribution Arrangement For Plasma Tube Of A Plasma Processing Chamber 有权
    等离子体处理室的等离子体管的高效气体分配布置

    公开(公告)号:US20070145021A1

    公开(公告)日:2007-06-28

    申请号:US11317961

    申请日:2005-12-23

    IPC分类号: B23K9/00

    CPC分类号: H01J37/32449 H01J37/3244

    摘要: A gas distribution arrangement configured to provide a process gas downstream to a plasma tube of a plasma processing chamber. The plasma tube has a top end. The arrangement includes a body having a first end. The first end has a width larger than the plasma tube and a protrusion end adapted to be inserted into the top end. The arrangement also includes a gas inlet vertically disposed in the body. The gas inlet extends from the first end toward the protrusion end and the gas inlet terminates before extending through the protrusion end. The arrangement further includes a plurality of directional inlet channels extending from a lower end of the gas inlet through the protrusion end.

    摘要翻译: 气体分配装置,被配置为在等离子体处理室的等离子体管的下游提供处理气体。 等离子体管具有顶端。 该装置包括具有第一端的主体。 第一端具有比等离子体管大的宽度和适于插入顶端的突出端。 该装置还包括垂直设置在主体中的气体入口。 气体入口从第一端朝向突出端延伸,并且气体入口在延伸穿过突出端之前终止。 该装置还包括从气体入口的下端通过突出端延伸的多个定向入口通道。

    Methods and arrangement for implementing highly efficient plasma traps
    3.
    发明申请
    Methods and arrangement for implementing highly efficient plasma traps 有权
    实现高效等离子体阱的方法和布置

    公开(公告)号:US20070144441A1

    公开(公告)日:2007-06-28

    申请号:US11318360

    申请日:2005-12-23

    IPC分类号: C23F1/00 C23C16/00

    摘要: An arrangement configured to contain plasma within plasma tube assembly of downstream microwave plasma system. Downstream microwave plasma system is configured to generate plasma within plasma-sustaining region of plasma tube assembly and channeling at least portion of plasma downstream to plasma processing chamber of downstream microwave plasma system. Arrangement includes a first hollow center electrically conductive disk surrounding a cylindrical structure that defines plasma passage of plasma tube assembly. Arrangement also includes a second hollow center electrically conductive disk also surrounding the cylindrical structure. Second hollow center electrically conductive disk is configured to be disposed in a spaced-apart relationship relative to first hollow center electrically conductive disk so as to form a first hollow center disk-shape interstitial region between first hollow center electrically conductive disc and second hollow center electrically conductive disc.

    摘要翻译: 配置成在下游微波等离子体系统的等离子体管组件内容纳等离子体的装置。 下游微波等离子体系统被配置为在等离子体管组件的等离子体维持区域内产生等离子体,并且将下游的等离子体处理室的等离子体下游的至少部分通道化。 布置包括围绕限定等离子体管组件的等离子体通道的圆柱形结构的第一空心中心导电盘。 布置还包括也围绕圆柱形结构的第二空心中心导电盘。 第二空心中心导电盘被配置为相对于第一中空中心导电盘以间隔的关系设置,以便在第一中空中心导电盘和第二空心中心之间形成第一中空圆盘状间隙区域 导电盘。

    High strip rate downstream chamber
    4.
    发明授权
    High strip rate downstream chamber 有权
    高速下游室

    公开(公告)号:US08298336B2

    公开(公告)日:2012-10-30

    申请号:US11096820

    申请日:2005-04-01

    摘要: A gas chamber contains upper and lower chamber bodies forming a cavity, a heating chuck for a wafer, a remote gas source, and an exhaust unit. Gas is injected into the cavity through channels in an injector. Each channel has sections that are bent with respect to each other at a sufficient angle to substantially eliminate entering light rays entering the channel from exiting the channel without reflection. The channels have funnel-shaped nozzles at end points proximate to the chuck. The injector also has thermal expansion relief slots and small gaps between the injector and mating surfaces of the chamber and gas source. The temperature of the injector is controlled by a cooling liquid in cooling channels and electrical heaters in receptacles of the injector. The upper chamber body is funnel-shaped and curves downward at an end of the upper chamber body proximate to the chuck.

    摘要翻译: 气室包含形成空腔的上下腔体,用于晶片的加热卡盘,远程气体源和排气单元。 气体通过注射器中的通道注入空腔。 每个通道具有以足够的角度相对于彼此弯曲的部分,以基本上消除进入通道的入射光线而不反射离开通道。 通道在靠近卡盘的端点处具有漏斗形喷嘴。 注射器还具有热膨胀释放槽和注射器与腔室和气体源的配合表面之间的小间隙。 喷射器的温度由冷却通道中的冷却液体和喷射器插座中的电加热器控制。 上腔体是漏斗形的,并且在上腔体的靠近卡盘的端部处向下弯曲。