公开(公告)号：US20100132889A1

公开(公告)日：2010-06-03

申请号：US12698406

申请日：2010-02-02

申请人： Kyeong-Koo CHI ,  Erik A. Edelberg

发明人： Kyeong-Koo CHI ,  Erik A. Edelberg

IPC分类号： C23F1/08

CPC分类号： H01L21/31144 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76816

摘要： A method for etching an ultra high aspect ratio feature in a dielectric layer through a carbon based mask is provided. The dielectric layer is selectively etched with respect to the carbon based mask, wherein the selective etching provides a net deposition of a fluorocarbon based polymer on the carbon based mask. The selective etch is stopped. The fluorocarbon polymer is selectively removed with respect to the carbon based mask, so that the carbon based mask remains, using a trimming. The selectively removing the fluorocarbon polymer is stopped. The dielectric layer is again selectively etched with respect to the carbon based mask, wherein the second selectively etching provides a net deposition of a fluorocarbon based polymer on the carbon based mask.

摘要翻译： 提供了一种通过碳基掩模蚀刻介电层中的超高宽比特征的方法。 相对于碳基掩模选择性地蚀刻电介质层，其中选择性蚀刻提供基于碳基掩模的基于碳氟化合物的聚合物的净沉积。 选择性蚀刻停止。 相对于碳基掩模选择性地除去氟碳聚合物，使得使用修整保留碳基掩模。 停止选择性除去氟碳聚合物。 相对于碳基掩模再次选择性地蚀刻介电层，其中第二选择性蚀刻提供基于碳基掩模的基于碳氟化合物的聚合物的净沉积。

公开(公告)号：US07547636B2

公开(公告)日：2009-06-16

申请号：US11671342

申请日：2007-02-05

申请人： Kyeong-Koo Chi ,  Erik A. Edelberg

发明人： Kyeong-Koo Chi ,  Erik A. Edelberg

IPC分类号： H01L21/302

CPC分类号： H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76816

摘要： A method for selectively etching an ultra high aspect ratio feature dielectric layer through a carbon based mask in an etch chamber is provided. A flow of an etch gas is provided, comprising a fluorocarbon containing molecule and an oxygen containing molecule to the etch chamber. A pulsed bias RF signal is provided. An energizing RF signal is provided to transform the etch gas to a plasma.

摘要翻译： 提供了一种通过蚀刻室中的基于碳的掩模来选择性地蚀刻超高宽比特征介电层的方法。 提供蚀刻气体的流动，其包括含氟碳分子和含氧分子到蚀刻室。 提供脉冲偏置RF信号。 提供激励RF信号以将蚀刻气体转换成等离子体。

公开(公告)号：US07083903B2

公开(公告)日：2006-08-01

申请号：US10462830

申请日：2003-06-17

申请人： Erik A. Edelberg ,  Robert P. Chebi ,  Gladys Sowan Lo

发明人： Erik A. Edelberg ,  Robert P. Chebi ,  Gladys Sowan Lo

IPC分类号： G03F7/00 ,  G03F7/36

CPC分类号： H01L21/31138 ,  G03F7/427

摘要： Methods of etching a carbon-rich layer on organic photoresist overlying an inorganic layer can utilize a process gas including CxHyFz, where y≧x and z≧0, and one or more optional components to generate a plasma effective to etch the carbon-rich layer with low removal of the inorganic layer. The carbon-rich layer can be removed in the same processing chamber, or alternatively can be removed in a different processing chamber, as used to remove the bulk photoresist.

摘要翻译： 在覆盖无机层的有机光致抗蚀剂上蚀刻碳富集层的方法可以利用包括C x H z H z F z的工艺气体，其中 y> = x和z> = 0，以及一个或多个任选的组分以产生有效地蚀刻富碳层的等离子体，同时去除无机层。 富碳层可以在相同的处理室中除去，或者可以在不同的处理室中除去，以用于去除体光致抗蚀剂。

公开(公告)号：US07682986B2

公开(公告)日：2010-03-23

申请号：US11671340

申请日：2007-02-05

申请人： Kyeong-Koo Chi ,  Erik A. Edelberg

发明人： Kyeong-Koo Chi ,  Erik A. Edelberg

IPC分类号： H01L21/302

CPC分类号： H01L21/31144 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76816

摘要： A method for etching an ultra high aspect ratio feature in a dielectric layer through a carbon based mask is provided. The dielectric layer is selectively etched with respect to the carbon based mask, wherein the selective etching provides a net deposition of a fluorocarbon based polymer on the carbon based mask. The selective etch is stopped. The fluorocarbon polymer is selectively removed with respect to the carbon based mask, so that the carbon based mask remains, using a trimming. The selectively removing the fluorocarbon polymer is stopped. The dielectric layer is again selectively etched with respect to the carbon based mask, wherein the second selectively etching provides a net deposition of a fluorocarbon based polymer on the carbon based mask.

摘要翻译： 提供了一种通过碳基掩模蚀刻介电层中的超高宽比特征的方法。 相对于碳基掩模选择性地蚀刻电介质层，其中选择性蚀刻提供基于碳基掩模的基于碳氟化合物的聚合物的净沉积。 选择性蚀刻停止。 相对于碳基掩模选择性地除去氟碳聚合物，使得使用修整保留碳基掩模。 停止选择性除去氟碳聚合物。 相对于碳基掩模再次选择性地蚀刻介电层，其中第二选择性蚀刻提供基于碳基掩模的碳氟基聚合物的净沉积。

公开(公告)号：US20080188082A1

公开(公告)日：2008-08-07

申请号：US11671342

申请日：2007-02-05

申请人： Kyeong-Koo Chi ,  Erik A. Edelberg

发明人： Kyeong-Koo Chi ,  Erik A. Edelberg

IPC分类号： H01L21/311 ,  H01L21/461

CPC分类号： H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76816

摘要： A method for selectively etching an ultra high aspect ratio feature dielectric layer through a carbon based mask in an etch chamber is provided. A flow of an etch gas is provided, comprising a fluorocarbon containing molecule and an oxygen containing molecule to the etch chamber. A pulsed bias RF signal is provided. An energizing RF signal is provided to transform the etch gas to a plasma.

摘要翻译： 提供了一种通过蚀刻室中的基于碳的掩模来选择性地蚀刻超高宽比特征介电层的方法。 提供蚀刻气体的流动，其包括含氟碳分子和含氧分子到蚀刻室。 提供脉冲偏置RF信号。 提供激励RF信号以将蚀刻气体转换成等离子体。

公开(公告)号：US08475673B2

公开(公告)日：2013-07-02

申请号：US12429940

申请日：2009-04-24

申请人： Erik A. Edelberg

发明人： Erik A. Edelberg

IPC分类号： H01L21/3065

CPC分类号： H01L21/02002 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/31116

摘要： An apparatus for etching high aspect ratio features is provided. A plasma processing chamber is provided, comprising a chamber wall forming a plasma processing chamber enclosure, a lower electrode, an upper electrode, a gas inlet, and a gas outlet. A high frequency radio frequency (RF) power source is electrically connected to at least one of the upper electrode or lower electrode. A bias power system is electrically connected to both the upper electrode and the lower electrode, wherein the bias power system is able to provide a bias to the upper and lower electrodes with a magnitude of at least 500 volts, and wherein the bias to the lower electrode is pulsed to intermittently. A gas source is in fluid connection with the gas inlet. A controller is controllably connected to the gas source, the high frequency RF power source, and the bias power system.

摘要翻译： 提供了用于蚀刻高纵横比特征的装置。 提供了一种等离子体处理室，包括形成等离子体处理室外壳的室壁，下电极，上电极，气体入口和气体出口。 高频射频（RF）电源电连接到上电极或下电极中的至少一个。 偏置电力系统电连接到上电极和下电极，其中偏置电力系统能够以至少500伏的幅度向上电极和下电极提供偏压，并且其中偏压到下电极 电极间歇地脉冲。 气体源与气体入口流体连通。 控制器可控地连接到气源，高频RF电源和偏置电源系统。

公开(公告)号：US08298336B2

公开(公告)日：2012-10-30

申请号：US11096820

申请日：2005-04-01

申请人： Ing-Yann Wang ,  Jaroslaw W. Winniczek ,  David J. Cooperberg ,  Erik A. Edelberg ,  Robert P. Chebi

发明人： Ing-Yann Wang ,  Jaroslaw W. Winniczek ,  David J. Cooperberg ,  Erik A. Edelberg ,  Robert P. Chebi

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01J37/32449 ,  H01J37/32357 ,  H01J37/3244 ,  Y10T137/0318 ,  Y10T137/85938

摘要： A gas chamber contains upper and lower chamber bodies forming a cavity, a heating chuck for a wafer, a remote gas source, and an exhaust unit. Gas is injected into the cavity through channels in an injector. Each channel has sections that are bent with respect to each other at a sufficient angle to substantially eliminate entering light rays entering the channel from exiting the channel without reflection. The channels have funnel-shaped nozzles at end points proximate to the chuck. The injector also has thermal expansion relief slots and small gaps between the injector and mating surfaces of the chamber and gas source. The temperature of the injector is controlled by a cooling liquid in cooling channels and electrical heaters in receptacles of the injector. The upper chamber body is funnel-shaped and curves downward at an end of the upper chamber body proximate to the chuck.

摘要翻译： 气室包含形成空腔的上下腔体，用于晶片的加热卡盘，远程气体源和排气单元。 气体通过注射器中的通道注入空腔。 每个通道具有以足够的角度相对于彼此弯曲的部分，以基本上消除进入通道的入射光线而不反射离开通道。 通道在靠近卡盘的端点处具有漏斗形喷嘴。 注射器还具有热膨胀释放槽和注射器与腔室和气体源的配合表面之间的小间隙。 喷射器的温度由冷却通道中的冷却液体和喷射器插座中的电加热器控制。 上腔体是漏斗形的，并且在上腔体的靠近卡盘的端部处向下弯曲。

公开(公告)号：US20100273332A1

公开(公告)日：2010-10-28

申请号：US12429940

申请日：2009-04-24

申请人： Erik A. Edelberg

发明人： Erik A. Edelberg

IPC分类号： H01L21/3065

CPC分类号： H01L21/02002 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/31116

摘要： An apparatus for etching high aspect ratio features is provided. A plasma processing chamber is provided, comprising a chamber wall forming a plasma processing chamber enclosure, a lower electrode, an upper electrode, a gas inlet, and a gas outlet. A high frequency radio frequency (RF) power source is electrically connected to at least one of the upper electrode or lower electrode. A bias power system is electrically connected to both the upper electrode and the lower electrode, wherein the bias power system is able to provide a bias to the upper and lower electrodes with a magnitude of at least 500 volts, and wherein the bias to the lower electrode is pulsed to intermittently. A gas source is in fluid connection with the gas inlet. A controller is controllably connected to the gas source, the high frequency RF power source, and the bias power system.

摘要翻译： 提供了用于蚀刻高纵横比特征的装置。 提供了一种等离子体处理室，包括形成等离子体处理室外壳的室壁，下电极，上电极，气体入口和气体出口。 高频射频（RF）电源电连接到上电极或下电极中的至少一个。 偏置电力系统电连接到上电极和下电极，其中偏置电力系统能够以至少500伏的幅度向上电极和下电极提供偏压，并且其中偏压到下电极 电极间歇地脉冲。 气体源与气体入口流体连通。 控制器可控地连接到气源，高频RF电源和偏置电源系统。

公开(公告)号：US20080188081A1

公开(公告)日：2008-08-07

申请号：US11671340

申请日：2007-02-05

申请人： Kyeong-Koo Chi ,  Erik A. Edelberg

发明人： Kyeong-Koo Chi ,  Erik A. Edelberg

IPC分类号： H01L21/311 ,  H01L21/461

CPC分类号： H01L21/31144 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76816

摘要： A method for etching an ultra high aspect ratio feature in a dielectric layer through a carbon based mask is provided. The dielectric layer is selectively etched with respect to the carbon based mask, wherein the selective etching provides a net deposition of a fluorocarbon based polymer on the carbon based mask. The selective etch is stopped. The fluorocarbon polymer is selectively removed with respect to the carbon based mask, so that the carbon based mask remains, using a trimming. The selectively removing the fluorocarbon polymer is stopped. The dielectric layer is again selectively etched with respect to the carbon based mask, wherein the second selectively etching provides a net deposition of a fluorocarbon based polymer on the carbon based mask.

摘要翻译： 提供了一种通过碳基掩模蚀刻介电层中的超高宽比特征的方法。 相对于碳基掩模选择性地蚀刻电介质层，其中选择性蚀刻提供基于碳基掩模的基于碳氟化合物的聚合物的净沉积。 选择性蚀刻停止。 相对于碳基掩模选择性地除去氟碳聚合物，使得使用修整保留碳基掩模。 停止选择性除去氟碳聚合物。 相对于碳基掩模再次选择性地蚀刻介电层，其中第二选择性蚀刻提供基于碳基掩模的碳氟基聚合物的净沉积。

公开(公告)号：US20110021030A1

公开(公告)日：2011-01-27

申请号：US12900351

申请日：2010-10-07

申请人： Bing Ji ,  Erik A. Edelberg ,  Takumi Yanagawa

发明人： Bing Ji ,  Erik A. Edelberg ,  Takumi Yanagawa

IPC分类号： H01L21/3065

CPC分类号： H01L21/31116 ,  H01J37/32091 ,  H01J37/32165

摘要： An apparatus for etching a dielectric layer contained by a substrate is provided. An etch reactor comprises a top electrode and a bottom electrode. An etch gas source supplies an etch gas into the etch reactor. A first Radio Frequency (RF) source generates a first RF power with a first frequency and supplies the first RF power into the etch reactor, whereas the first frequency is between 100 kilo Hertz (kHz) and 600 kHz. A second RF source generates a second RF power with a second frequency and supplies the second RF power into the etch reactor, whereas the second frequency is at least 10 mega Hertz (MHz).

摘要翻译： 提供了一种用于蚀刻由基板包含的介电层的设备。 蚀刻反应器包括顶部电极和底部电极。 蚀刻气体源将蚀刻气体供应到蚀刻反应器中。 第一射频（RF）源产生具有第一频率的第一RF功率，并将第一RF功率提供给蚀刻反应器，而第一频率在100千赫兹（kHz）和600kHz之间。 第二RF源产生具有第二频率的第二RF功率，并将第二RF功率提供给蚀刻反应器，而第二频率为至少10兆赫兹（MHz）。