公开(公告)号：US08298336B2

公开(公告)日：2012-10-30

申请号：US11096820

申请日：2005-04-01

申请人： Ing-Yann Wang ,  Jaroslaw W. Winniczek ,  David J. Cooperberg ,  Erik A. Edelberg ,  Robert P. Chebi

发明人： Ing-Yann Wang ,  Jaroslaw W. Winniczek ,  David J. Cooperberg ,  Erik A. Edelberg ,  Robert P. Chebi

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01J37/32449 ,  H01J37/32357 ,  H01J37/3244 ,  Y10T137/0318 ,  Y10T137/85938

摘要： A gas chamber contains upper and lower chamber bodies forming a cavity, a heating chuck for a wafer, a remote gas source, and an exhaust unit. Gas is injected into the cavity through channels in an injector. Each channel has sections that are bent with respect to each other at a sufficient angle to substantially eliminate entering light rays entering the channel from exiting the channel without reflection. The channels have funnel-shaped nozzles at end points proximate to the chuck. The injector also has thermal expansion relief slots and small gaps between the injector and mating surfaces of the chamber and gas source. The temperature of the injector is controlled by a cooling liquid in cooling channels and electrical heaters in receptacles of the injector. The upper chamber body is funnel-shaped and curves downward at an end of the upper chamber body proximate to the chuck.

摘要翻译： 气室包含形成空腔的上下腔体，用于晶片的加热卡盘，远程气体源和排气单元。 气体通过注射器中的通道注入空腔。 每个通道具有以足够的角度相对于彼此弯曲的部分，以基本上消除进入通道的入射光线而不反射离开通道。 通道在靠近卡盘的端点处具有漏斗形喷嘴。 注射器还具有热膨胀释放槽和注射器与腔室和气体源的配合表面之间的小间隙。 喷射器的温度由冷却通道中的冷却液体和喷射器插座中的电加热器控制。 上腔体是漏斗形的，并且在上腔体的靠近卡盘的端部处向下弯曲。

公开(公告)号：US09051647B2

公开(公告)日：2015-06-09

申请号：US12605027

申请日：2009-10-23

申请人： David J. Cooperberg ,  Valid Vahedi ,  Douglas Ratto ,  Harmeet Singh ,  Neil Benjamin

发明人： David J. Cooperberg ,  Valid Vahedi ,  Douglas Ratto ,  Harmeet Singh ,  Neil Benjamin

IPC分类号： H01L21/306 ,  C23C16/00 ,  C23C16/455 ,  C23C16/507 ,  H01J37/32

CPC分类号： C23C16/45574 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/3323 ,  H01J2237/3344

摘要： A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas injector fixed to part of or removably mounted in an opening in the dielectric window, the gas injector including a plurality of gas outlets supplying process gas at adjustable flow rates to multiple zones of the chamber, and an RF energy source such as a planar or non-planar spiral coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.

公开(公告)号：US20100041238A1

公开(公告)日：2010-02-18

申请号：US12605027

申请日：2009-10-23

申请人： David J. Cooperberg ,  Vahid Vahedi ,  Douglas Ratto ,  Harmeet Singh ,  Neil Benjamin

发明人： David J. Cooperberg ,  Vahid Vahedi ,  Douglas Ratto ,  Harmeet Singh ,  Neil Benjamin

IPC分类号： H01L21/465

CPC分类号： C23C16/45574 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/3323 ,  H01J2237/3344

摘要： A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas injector fixed to part of or removably mounted in an opening in the dielectric window, the gas injector including a plurality of gas outlets supplying process gas at adjustable flow rates to multiple zones of the chamber, and an RF energy source such as a planar or non-planar spiral coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.

摘要翻译： 一种用于等离子体处理系统的可调多区域注入系统，用于诸如半导体晶片的衬底的等离子体处理。 该系统包括等离子体处理室，用于在处理室内支撑衬底的衬底支撑件，具有面向衬底支撑件的内表面的电介质构件，形成处理室壁的电介质构件，固定到 或可移除地安装在电介质窗口的开口中，气体注射器包括多个气体出口，其以可调节的流速向腔室的多个区域供应处理气体，以及RF能量源，例如平面或非平面螺旋线圈，其中 将RF能量感应耦合通过电介质构件并进入腔室，以将处理气体激励成等离子体状态。 喷射器可以包括轴向出口，其以第一流量向中心区域供应处理气体，并且离轴出口以相同的处理气体以第二流量供应到围绕中心区域的环形区域。 该装置允许气体输送的修改以通过允许独立调节气体流到腔室中的多个区域来满足特定处理状态的需要。 此外，与消耗式喷头装置相比，可以更容易且经济地更换可移除安装的气体喷射器。