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    METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICE
    1.
    发明申请
    METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220246791A1

    公开(公告)日：2022-08-04

    申请号：US17725741

    申请日：2022-04-21

    Applicant: InnoLux Corporation

    Inventor： Kai CHENG ,  Tsau-Hua HSIEH ,  Fang-Ying LIN ,  Tung-Kai LIU ,  Hui-Chieh WANG ,  Chun-Hsien LIN ,  Jui-Feng KO

    IPC: H01L33/00 ,  H01L33/62

    Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of light-emitting elements on a first substrate and forming a first pattern array on a second substrate, wherein the first pattern array includes an adhesive layer. The method also includes transferring the plurality of light-emitting elements from the first substrate to the second substrate and forming the first pattern array on a third substrate. The method includes transferring the plurality of light-emitting elements from the second substrate to the third substrate, and reducing an adhesion force of a portion of the adhesive layer. The method also includes forming a second pattern array on a fourth substrate, and transferring the plurality of light-emitting elements from the third substrate to the fourth substrate. The pitch between the plurality of light-emitting elements on the first substrate is different than the pitch of the first pattern array.

    MANUFACTURING METHOD OF ELECTRONIC DEVICE
    2.
    发明公开
    MANUFACTURING METHOD OF ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20240250219A1

    公开(公告)日：2024-07-25

    申请号：US18403510

    申请日：2024-01-03

    Applicant: InnoLux Corporation

    Inventor： Kai CHENG ,  Fang-Ying LIN ,  Ming-Chang LIN ,  Tsau-Hua HSIEH

    IPC: H01L33/48 ,  H01L25/075 ,  H01L25/16

    CPC classification number: H01L33/486 ,  H01L25/0753 ,  H01L25/167

    Abstract: A manufacturing method of an electronic device includes: providing a first substrate, which has a base layer and a plurality of electronic components disposed on the base layer; adhering adhesive material to each of the plurality of electronic components; providing a target substrate, wherein the target substrate and the first substrate are separated from each other by a distance; and transferring at least part of the plurality of electronic components adhered with the adhesive material to the target substrate through a laser process, wherein at least part of the plurality of electronic components are attached to the target substrate via the adhesive material.

    METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICE
    3.
    发明申请
    METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190044023A1

    公开(公告)日：2019-02-07

    申请号：US16002156

    申请日：2018-06-07

    Applicant: InnoLux Corporation

    Inventor： Kai CHENG ,  Tsau-Hua HSIEH ,  Fang-Ying LIN ,  Tung-Kai LIU ,  Hui-Chieh WANG ,  Chun-Hsien LIN ,  Jui-Feng KO

    IPC: H01L33/00 ,  H01L33/62 ,  H01L25/075

    Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of light-emitting elements on a first substrate and forming a first pattern array on a second substrate. The method also includes transferring the plurality of light-emitting elements from the first substrate to the second substrate. The method further includes forming the first pattern array on a third substrate. In addition, the method includes transferring the plurality of light-emitting elements from the second substrate to the third substrate. The method also includes forming a second pattern array on a fourth substrate. The method further includes transferring the plurality of light-emitting elements from the third substrate to the fourth substrate. The pitch between the plurality of light-emitting elements on the first substrate is different than the pitch of the first pattern array.

    METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICE
    6.
    发明申请
    METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200259044A1

    公开(公告)日：2020-08-13

    申请号：US16858826

    申请日：2020-04-27

    Applicant: InnoLux Corporation

    Inventor： Kai CHENG ,  Tsau-Hua HSIEH ,  Fang-Ying LIN ,  Tung-Kai LIU ,  Hui-Chieh WANG ,  Chun-Hsien LIN ,  Jui-Feng KO

    IPC: H01L33/00 ,  H01L33/62

    Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of light-emitting elements on a first substrate and forming a first pattern array on a second substrate. The method also includes transferring the plurality of light-emitting elements from the first substrate to the second substrate. The method further includes forming the first pattern array on a third substrate. In addition, the method includes transferring the plurality of light-emitting elements from the second substrate to the third substrate. The method also includes forming a second pattern array on a fourth substrate. The method further includes transferring the plurality of light-emitting elements from the third substrate to the fourth substrate. The pitch between the plurality of light-emitting elements on the first substrate is different than the pitch of the first pattern array.

    METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICE
    8.
    发明申请
    METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220246790A1

    公开(公告)日：2022-08-04

    申请号：US17725732

    申请日：2022-04-21

    Applicant: InnoLux Corporation

    Inventor： Kai CHENG ,  Tsau-Hua HSIEH ,  Fang-Ying LIN ,  Tung-Kai LIU ,  Hui-Chieh WANG ,  Chun-Hsien LIN ,  Jui-Feng KO

    IPC: H01L33/00 ,  H01L33/62

    Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of diodes on a first substrate and forming a first pattern array on a second substrate. The method also includes transferring the plurality of diodes from the first substrate to the second substrate. The method further includes forming the first pattern array on a third substrate. In addition, the method includes transferring the plurality of diodes from the second substrate to the third substrate. The method also includes forming a second pattern array on a fourth substrate. The method further includes transferring the plurality of diodes from the third substrate to the fourth substrate. The pitch between the plurality of diodes on the first substrate is different from the pitch of the first pattern array.

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