公开(公告)号：US10382083B2

公开(公告)日：2019-08-13

申请号：US16117608

申请日：2018-08-30

Applicant: Integrated Device Technology, Inc.

Inventor： Andrea Betti-Berutto ,  Sushil Kumar ,  Shawn Parker ,  Jonathan L. Kennedy ,  Christopher Saint ,  Michael Shaw ,  James Little ,  Jeff Illgner

IPC: H04B1/38 ,  H04B1/28 ,  H04B1/40 ,  H01L25/16 ,  H01L23/66 ,  H04B1/04 ,  H04B1/16 ,  H03F3/193 ,  H04W52/02 ,  H03F3/21 ,  H01L25/18 ,  H01L27/06

Abstract: An e-band transceiver includes a transmitter circuit and a receiver circuit. The transmitter circuit includes a surface mounted technology (SMT) module on which is mounted a silicon-germanium (SiGe) bipolar plus CMOS (BiCMOS) converter, a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) output amplifier coupled to the SiGe BiCMOS converter, and a microstrip/waveguide interface coupled to the GaAs pHEMT output amplifier. The receiver circuit of the e-band transceiver includes a receiver-side SMT module on which is mounted a receiver-side SiGe BiCMOS converter, a GaAs pHEMT low noise amplifier coupled to the receiver-side SiGe BiCMOS converter, and a receiver-side microstrip/waveguide interface coupled to the receiver-side GaAs pHEMT low noise amplifier.

公开(公告)号：US10075207B2

公开(公告)日：2018-09-11

申请号：US15144193

申请日：2016-05-02

Applicant: Integrated Device Technology, Inc.

Inventor： Andrea Betti-Berutto ,  Sushil Kumar ,  Shawn Parker ,  Jonathan L. Kennedy ,  Christopher Saint ,  Michael Shaw ,  James Little ,  Jeff Illgner

IPC: H04B1/38 ,  H04B1/28 ,  H04B1/40 ,  H01L25/16 ,  H01L23/66 ,  H04B1/04 ,  H04B1/16 ,  H03F3/193 ,  H04W52/02 ,  H03F3/21 ,  H01L27/06

CPC classification number: H04B1/40 ,  H01L23/66 ,  H01L25/16 ,  H01L25/18 ,  H01L27/0623 ,  H01L2223/6627 ,  H01L2223/6644 ,  H03F3/1935 ,  H03F3/211 ,  H03F2200/294 ,  H03F2200/405 ,  H03F2200/451 ,  H04B1/04 ,  H04B1/16 ,  H04B2001/0416 ,  H04W52/0209 ,  Y02D70/00

Abstract: An e-band transceiver includes a transmitter circuit and a receiver circuit. The transmitter circuit includes a surface mounted technology (SMT) module on which is mounted a silicon-germanium (SiGe) bipolar plus CMOS (BiCMOS) converter, a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) output amplifier coupled to the SiGe BiCMOS converter, and a microstrip/waveguide interface coupled to the GaAs pHEMT output amplifier. The receiver circuit of the e-band transceiver includes a receiver-side SMT module on which is mounted a receiver-side SiGe BiCMOS converter, a GaAs pHEMT low noise amplifier coupled to the receiver-side SiGe BiCMOS converter, and a receiver-side microstrip/waveguide interface coupled to the receiver-side GaAs pHEMT low noise amplifier.