公开(公告)号：US20200313075A1

公开(公告)日：2020-10-01

申请号：US16367129

申请日：2019-03-27

Applicant: Intel Corporation

Inventor： Noriyuki SATO ,  Angeline SMITH ,  Tanay GOSAVI ,  Sasikanth MANIPATRUNI ,  Kaan OGUZ ,  Kevin O'Brien ,  Benjamin BUFORD ,  Tofizur RAHMAN ,  Rohan PATIL ,  Nafees KABIR ,  Michael CHRISTENSON ,  Ian YOUNG ,  Hui Jae YOO ,  Christopher WIEGAND

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  G11C11/16 ,  H01F10/32

Abstract: A memory device includes a first electrode including a spin-orbit material, a magnetic junction on a portion of the first electrode and a first structure including a dielectric on a portion of the first electrode. The first structure has a first sidewall and a second sidewall opposite to the first sidewall. The memory device further includes a second structure on a portion of the first electrode, where the second structure has a sidewall adjacent to the second sidewall of the first structure. The memory device further includes a first conductive interconnect above and coupled with each of the magnetic junction and the second structure and a second conductive interconnect below and coupled with the first electrode, where the second conductive interconnect is laterally distant from the magnetic junction and the second structure.

公开(公告)号：US20200006637A1

公开(公告)日：2020-01-02

申请号：US16024714

申请日：2018-06-29

Applicant: Intel Corporation

Inventor： Tanay GOSAVI ,  Sasikanth MANIPATRUNI ,  Chia-Ching LIN ,  Kaan OGUZ ,  Christopher WIEGAND ,  Angeline SMITH ,  Noriyuki SATO ,  Kevin O'BRIEN ,  Benjamin BUFORD ,  Ian YOUNG ,  MD Tofizur RAHMAN

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12

Abstract: Embodiments herein relate to a system, apparatus, and/or process for producing a spin orbit torque (SOT) electrode that includes a first layer with a first side to couple with a free layer of a magnetic tunnel junction (MTJ) and a second layer coupled with a second side of the first layer opposite the first side, where a value of an electrical resistance in the first SOT layer is lower than a value of an electrical resistance in the second SOT layer and where a current applied to the SOT electrode is to cause current to preferentially flow in the first SOT layer to cause a magnetic polarization of the free layer to change directions. During production of the SOT electrode, the second layer may act as an etch stop.