公开(公告)号：US20160307914A1

公开(公告)日：2016-10-20

申请号：US15133214

申请日：2016-04-19

Applicant: Intel Corporation

Inventor： Jie Jason Sun ,  Brian Cleereman ,  Minsoo Lee

IPC: H01L27/115 ,  H01L21/822 ,  G11C16/04 ,  H01L21/28

CPC classification number: H01L27/11582 ,  G11C16/0466 ,  G11C16/0483 ,  G11C2213/71 ,  H01L21/28282 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L29/7889 ,  H01L29/7926

Abstract: An integrated circuit may include a pillar of semiconductor material, a field effect transistor having a channel that is formed in the pillar of semiconductor material, and two or more memory cells, stacked vertically on top of the field effect transistor, and having channels that are formed in the pillar semiconductor of material.

Abstract translation: 集成电路可以包括半导体材料的柱，具有形成在半导体材料的柱中的沟道的场效应晶体管，以及垂直于场效应晶体管的顶部堆叠的两个或更多个存储单元，并且具有 形成在材料的柱状半导体中。

公开(公告)号：US10229928B2

公开(公告)日：2019-03-12

申请号：US15133214

申请日：2016-04-19

Applicant: Intel Corporation

Inventor： Jie Jason Sun ,  Brian Cleereman ,  Minsoo Lee

IPC: H01L27/115 ,  H01L21/822 ,  H01L21/28 ,  H01L27/11582 ,  G11C16/04 ,  H01L27/06 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L29/788 ,  H01L29/792

Abstract: An integrated circuit may include a pillar of semiconductor material, a field effect transistor having a channel that is formed in the pillar of semiconductor material, and two or more memory cells, stacked vertically on top of the field effect transistor, and having channels that are formed in the pillar semiconductor of material.