公开(公告)号：US20160203864A1

公开(公告)日：2016-07-14

申请号：US14879008

申请日：2015-10-08

Applicant: Intel Corporation

Inventor： SHEKOUFEH QAWAMI ,  RAJESH SUNDARAM ,  DAVID J. ZIMMERMAN ,  BLAISE FANNING

IPC: G11C13/00

CPC classification number: G11C13/0038 ,  G06F1/3275 ,  G06F9/30101 ,  G06F12/0246 ,  G11C13/0004 ,  G11C13/0033 ,  G11C16/06 ,  Y02D10/14

Abstract: Examples are disclosed for adaptive configuration of non-volatile memory. The examples include a mode register configured to include default and updated values to indicate one or more configurations of the non-volatile memory. The examples may also include discoverable capabilities maintained in a configuration table that may indicate memory address lengths and/or operating power states.

公开(公告)号：US20190035437A1

公开(公告)日：2019-01-31

申请号：US15857349

申请日：2017-12-28

Applicant: Intel Corporation

Inventor： DAVID J. ZIMMERMAN ,  ROBERT M. ELLIS ,  RAJESH SUNDARAM

IPC: G11C7/10 ,  G06F3/06

Abstract: Devices, systems, and methods having increased efficiency selective writing to memory are disclosed and described. A memory controller, upon receiving a dirty data segment, performs a read-modify-write to retrieve a corresponding data line from memory, saves a copy of the data line, merges the dirty data segment into the appropriate location in the data line to create a modified data line, and generates a write mask from the modified data line and the copy of the data line.