公开(公告)号：US20200185271A1

公开(公告)日：2020-06-11

申请号：US16637930

申请日：2017-09-30

Applicant: Intel Corporation

Inventor： Charles H. WALLACE ,  Reken PATEL ,  Hyunsoo PARK ,  Mohit K. HARAN ,  Debashish BASU ,  Curtis W. WARD ,  Ruth A. Brain

IPC: H01L21/768 ,  H01L21/311 ,  H01L23/522

Abstract: Conductive via and metal line end fabrication is described. In an example, an interconnect structure includes a first inter-layer dielectric (ILD) on a hardmask layer, where the ILD includes a first ILD opening and a second ILD opening. The interconnect structure further includes an etch stop layer (ESL) on the ILD layer, where the ESL includes a first ESL opening aligned with the first ILD opening to form a first via opening, and where the ESL layer includes a second ESL opening aligned with the second ILD opening. The interconnect structure further includes a first via in the first via opening, a second ILD layer on the first ESL, and a metal line in the second ILD layer, where the metal line is in contact with the first via, and where the metal line includes a first metal opening, and where the metal line includes a second metal opening aligned with the second ILD opening and the ESL opening to form a second via opening. The interconnect structure further includes a metal line end in the first metal opening and further includes a second via in the metal line, where the second via is in the second via opening.

公开(公告)号：US20230101107A1

公开(公告)日：2023-03-30

申请号：US17485299

申请日：2021-09-24

Applicant: Intel Corporation

Inventor： AKM Shaestagir CHOWDHURY ,  Debashish BASU ,  Githin F. ALAPATT ,  Justin E. MUELLER ,  James Y. JEONG

IPC: H01L23/522 ,  H01L23/532 ,  H01L21/768

Abstract: An integrated circuit structure comprises a first metal layer having first conductive features. A second metal layer has second conductive features. A via layer is in an insulating layer between the first metal layer and the second metal layer. First vias and second vias are formed in the insulating layer. The first vias have a first aspect ratio greater than a second aspect ratio of the second vias. A barrier-less metal partially fills the first vias and fills the second vias. A pure metal fills a remainder of the first vias.