公开(公告)号：US20250098249A1

公开(公告)日：2025-03-20

申请号：US18467859

申请日：2023-09-15

Applicant: Intel Corporation

Inventor： Avijit Barik ,  Tao Chu ,  Minwoo Jang ,  Tofizur RAHMAN ,  Conor P. Puls ,  Ariana E. Bondoc ,  Diane Lancaster ,  Chi-Hing Choi ,  Derek Keefer

IPC: H01L29/45 ,  H01L21/285 ,  H01L23/522 ,  H01L23/532 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: Disclosed herein are IC structures and devices that aim to mitigate proximity effects of deep trench vias. An example IC structure may include a device region having a first face and a second face, the second face being opposite the first face, and further include a conductive via extending between the first face and the second face, wherein the conductive via includes an electrically conductive material, and wherein a concentration of titanium at sidewalls of the conductive via is below about 1015 atoms per cubic centimeter.