公开(公告)号：US10163508B2

公开(公告)日：2018-12-25

申请号：US15055153

申请日：2016-02-26

Applicant: Intel Corporation

Inventor： Woojong Han ,  Mohamed Arafa ,  Brian S. Morris ,  Mani Prakash ,  James K. Pickett ,  John K. Grooms ,  Bruce Querbach ,  Edward L Payton ,  Dong Wang

IPC: G11C5/06 ,  G11C14/00 ,  G11C5/02 ,  G11C5/14

Abstract: Methods and apparatus related to supporting both DDR (Double Data Rate) and NVM (Non-Volatile Memory) DIMM (Dual Inline Memory Module) on the same memory slot are described. In one embodiment, a DIMM comprises volatile memory and non-volatile memory, and data is communicated with the volatile memory and the non-volatile memory via a single memory slot. Other embodiments are also disclosed and claimed.

公开(公告)号：US20170249991A1

公开(公告)日：2017-08-31

申请号：US15055153

申请日：2016-02-26

Applicant: Intel Corporation

Inventor： Woojong Han ,  Mohamed Arafa ,  Brian S. Morris ,  Mani Prakash ,  James K. Pickett ,  John K. Grooms ,  Bruce Querbach ,  Edward L Payton ,  Dong Wang

IPC: G11C14/00 ,  G11C5/14 ,  G11C5/02

CPC classification number: G11C14/0009 ,  G11C5/02 ,  G11C5/025 ,  G11C5/141 ,  G11C11/005

Abstract: Methods and apparatus related to supporting both DDR (Double Data Rate) and NVM (Non-Volatile Memory) DIMM (Dual Inline Memory Module) on the same memory slot are described. In one embodiment, a DIMM comprises volatile memory and non-volatile memory, and data is communicated with the volatile memory and the non-volatile memory via a single memory slot. Other embodiments are also disclosed and claimed.