公开(公告)号：US10950301B2

公开(公告)日：2021-03-16

申请号：US16320023

申请日：2016-09-30

Applicant: Intel Corporation

Inventor： Rafael Rios ,  Abhishek Anil Sharma ,  Van H. Le ,  Gilbert William Dewey ,  Jack T. Kavalieros

IPC: G11C13/00 ,  H01L45/00 ,  H01L27/24 ,  G11C8/16

Abstract: A two transistor, one resistor gain cell and a suitable storage element are described. In some embodiments the gain cell has a resistive memory element coupled to a common node at one end to store a value and to a source line at another end, the value being read as conductivity between the common node and the source line of the resistive memory element, a write transistor having a source coupled to a bit line, a gate coupled to a write line, and a drain coupled to the common node to write a value at the bit line to the resistive memory element upon setting the write line high, and a read transistor having a source coupled to a bit line read line and a gate coupled to the common node to read the value written to the resistive memory element as a value at the second transistor gate.

公开(公告)号：US10964701B2

公开(公告)日：2021-03-30

申请号：US16480948

申请日：2017-03-31

Applicant: Intel Corporation

Inventor： Abhishek Anil Sharma ,  Van H. Le ,  Gilbert William Dewey ,  Rafael Rios ,  Jack T. Kavalieros ,  Yih Wang ,  Shriram Shivaraman

IPC: H01L27/108 ,  G11C11/401 ,  G11C11/404 ,  G11C11/408 ,  G11C11/4096 ,  H01L21/02 ,  H01L21/311 ,  H01L21/768 ,  H01L27/13 ,  H01L49/02 ,  H01L29/22 ,  H01L29/24 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786 ,  H01L21/3105

Abstract: A charge storage memory is described based on a vertical shared gate thin-film transistor. In one example, a memory cell structure includes a capacitor to store a charge, the state of the charge representing a stored value, and an access transistor having a drain coupled to a bit line to read the capacitor state, a vertical gate coupled to a word line to write the capacitor state, and a drain coupled to the capacitor to charge the capacitor from the drain through the gate, wherein the gate extends from the word line through metal layers of an integrated circuit.