公开(公告)号：US20220416503A1

公开(公告)日：2022-12-29

申请号：US17357938

申请日：2021-06-24

Applicant: Intel Corporation

Inventor： Priyanka DOBRIYAL ,  Aditi MALLIK ,  Saeed FATHOLOLOUMI ,  Ankur AGRAWAL ,  Anna PRAKASH ,  Hemant Mahesh SHAH ,  Raiyomand ASPANDIAR ,  Neil Raymund CARANTO

IPC: H01S5/024 ,  H01S5/34

Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques related to thermal routing techniques within a hybrid silicon laser or photonics integrated circuit to facilitate heat extraction during laser operation. In particular dual metal layers, with a top metal layer thermally coupled with P node above a quantum well and extending substantially under a heat sink, and a bottom metal layer thermally coupled with an N node, where the top metal layer and the bottom metal layer are not electrically coupled. Other embodiments may be described and/or claimed.

公开(公告)号：US20210305731A1

公开(公告)日：2021-09-30

申请号：US16833221

申请日：2020-03-27

Applicant: Intel Corporation

Inventor： Steven A. KLEIN ,  Kuang LIU ,  Srikant NEKKANTY ,  Feroz MOHAMMAD ,  Donald Tiendung TRAN ,  Srinivasa ARAVAMUDHAN ,  Hemant Mahesh SHAH ,  Alexander W. HUETTIS

IPC: H01R12/70 ,  H01R43/04

Abstract: Systems, apparatus, and/or processes directed to applying pressure to a socket to alter a shape of the socket to improve a connection between the socket and a substrate, printed circuit board, or other component. The socket may receive one or more chips, may be an interconnect, or may be some other structure that is part of a package. The shape of the socket may be flattened so that a side of the socket may form a high-quality physical and electrical coupling with the substrate.