公开(公告)号：US20240194732A1

公开(公告)日：2024-06-13

申请号：US18077658

申请日：2022-12-08

Applicant: Intel Corporation

Inventor： Matthew J. Prince ,  Amitesh Shrivastava ,  Walid M. Hafez ,  Anurag A. Jain ,  Gary Ding ,  Sharath Hegde ,  Caitlin M. Kilroy ,  Inki Kim

IPC: H01L29/06 ,  H01L21/033 ,  H01L29/08 ,  H01L29/66

CPC classification number: H01L29/0673 ,  H01L21/0332 ,  H01L21/0337 ,  H01L29/0843 ,  H01L29/66439

Abstract: Techniques are provided herein to use a chemical mechanical polishing (CMP) process to polish carbon hard mask (CHM) for a variety of useful semiconductor fabrication applications. In one example, a CMP process that uses a silica-based slurry is used to polish CHM formed over gate trenches of different widths, such that the CHM can recess to substantially the same height within the gate trenches of different widths. In another example, CHM may be deposited over groups of fins or a backbone structure and polished using a CMP process with a silica-based slurry to ensure a planar top surface of CHM over the groups of fins or backbone structure.