公开(公告)号：US20230317615A1

公开(公告)日：2023-10-05

申请号：US17708051

申请日：2022-03-30

Applicant: Intel Corporation

Inventor： Deepyanti Taneja ,  Travis W. Lajoie ,  Abhishek Anil Sharma ,  Gregory J. George ,  Tarannum Tiasha ,  Huiying Liu ,  Yue Liu ,  Moshe Dolejsi ,  Vinaykumar V. Hadagali ,  Shardul Wadekar ,  Vladimir Nikitin ,  Albert B. Chen ,  Daniel J. Schinke ,  James O'Donnell

IPC: H01L23/532 ,  H01L27/12

CPC classification number: H01L23/53295 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/1255 ,  H01L23/5226

Abstract: An integrated circuit includes a first layer, and a second layer above the first layer. A third layer is between a first section of the first layer and a first section of the second layer. A fourth layer is laterally adjacent to the third layer, the fourth layer between a second section of the first layer and a second section of the second layer. In an example, a first dielectric material of the third layer is different (e.g., one or both of compositionally different and structurally different) from a second dielectric material of the fourth layer. In an example, the third and fourth layers are etch stop layers. In some cases, the third and fourth layers are coplanar with each other with respect to their top surfaces, or their bottom surfaces, or both their top and bottom surfaces.

公开(公告)号：US20230080212A1

公开(公告)日：2023-03-16

申请号：US17476165

申请日：2021-09-15

Applicant: Intel Corporation

Inventor： Christopher Connor ,  James O'Donnell ,  Shailesh Kumar Madisetti

IPC: H01L29/786 ,  H01L29/66

Abstract: A thin film transistor (TFT) structure. In an example, the TFT includes a gate electrode, a first layer comprising an oxide semiconductor material, and a second layer between the first layer and the gate electrode. The second layer is crystalline and is in contact with the first layer, and includes zirconium and oxygen. The TFT includes a first contact coupled to the first layer at a first location, and a second contact coupled to the first layer at a second location. In some cases, the second layer further includes hafnium. In some cases, the TFT includes a third layer between of the gate electrode and the second layer, the third layer comprising a metal and oxygen. The gate electrode may also include the metal. In some cases, hydrogen is present at an interface between the gate electrode and the second layer.