公开(公告)号：US10950660B2

公开(公告)日：2021-03-16

申请号：US16328533

申请日：2016-09-29

Applicant: Intel Corporation

Inventor： Kaan Oguz ,  Kevin P. OBrien ,  Brian S. Doyle ,  Charles C. Kuo ,  Mark L. Doczy

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02

Abstract: A perpendicular spin transfer torque memory (pSTTM) device incorporates a magnetic tunnel junction (MTJ) device having a free magnetic stack and a fixed magnetic stack separated by a dielectric tunneling layer. The free magnetic stack includes an uppermost magnetic layer that is at least partially covered by a cap layer. The cap layer is at least partially covered by a protective layer containing at least one of: ruthenium (Ru); cobalt/iron/boron (CoFeB); molybdenum (Mo); cobalt (Co); tungsten (W); or platinum (Pt). The protective layer is at least partially covered by a cap metal layer which may form a portion of MTJ electrode. The protective layer minimizes the occurrence of physical and/or chemical attack of the cap layer by the materials used in the cap metal layer, beneficially improving the interface anisotropy of the MTJ free magnetic layer.

公开(公告)号：US20190198567A1

公开(公告)日：2019-06-27

申请号：US16328533

申请日：2016-09-29

Applicant: Intel Corporation

Inventor： Kaan Oguz ,  Kevin P. OBrien ,  BRIAN S. DOYLE ,  CHARLES C. KUO ,  Mark L. Doczy

IPC: H01L27/22 ,  H01L43/12 ,  H01L43/10 ,  H01L43/08 ,  H01L43/02

CPC classification number: H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A perpendicular spin transfer torque memory (pSTTM) device incorporates a magnetic tunnel junction (MTJ) device having a free magnetic stack and a fixed magnetic stack separated by a dielectric tunneling layer. The free magnetic stack includes an uppermost magnetic layer that is at least partially covered by a cap layer. The cap layer is at least partially covered by a protective layer containing at least one of: ruthenium (Ru); cobalt/iron/boron (CoFeB); molybdenum (Mo); cobalt (Co); tungsten (W); or platinum (Pt). The protective layer is at least partially covered by a cap metal layer which may form a portion of MTJ electrode. The protective layer minimizes the occurrence of physical and/or chemical attack of the cap layer by the materials used in the cap metal layer, beneficially improving the interface anisotropy of the