公开(公告)号：US20220415908A1

公开(公告)日：2022-12-29

申请号：US17375540

申请日：2021-07-14

Applicant: Intel Corporation

Inventor： Guangyu Huang ,  Dipanjan Basu ,  Meng-Wei Kuo ,  Randy Koval ,  Henok Mebrahtu ,  Minsheng Wang ,  Jie Li ,  Fei Wang ,  Qun Gao ,  Xingui Zhang ,  Guanjie Li

IPC: H01L27/1157 ,  H01L21/28 ,  H01L29/423 ,  H01L29/66 ,  H01L29/792

Abstract: Systems, apparatuses and methods may provide for memory cell technology comprising a control gate, a conductive channel, and a charge storage structure coupled to the control gate and the conductive channel, wherein the charge storage structure includes a polysilicon layer and a metal layer. In one example, the metal layer includes titanium nitride or other high effective work function metal.

公开(公告)号：US10790290B2

公开(公告)日：2020-09-29

申请号：US15721224

申请日：2017-09-29

Applicant: INTEL CORPORATION

Inventor： David A. Daycock ,  Purnima Narayanan ,  John Hopkins ,  Guoxing Duan ,  Barbara L. Casey ,  Christopher J. Larsen ,  Meng-Wei Kuo ,  Qian Tao

IPC: H01L27/11524 ,  H01L27/1157 ,  H01L21/8234 ,  H01L27/11582 ,  H01L27/11556

Abstract: A 3D NAND storage device includes a plurality of layers containing doped semiconductor material interleaved with a plurality of layers of dielectric material. Each of the pillars forming the 3D NAND storage device includes a plurality of memory cells and a drain-end select gate (SGD). The pillars are separated by a hollow channel in which a plurality of film layers, including at least a lower film layer and an upper film layer have been deposited. The systems and methods described herein remove at least the upper film layer proximate the SGD while maintaining the film layers proximate the memory cells. Such an arrangement beneficially permits tailoring the film layers proximate the SGD prior to depositing the channel film layer in the hollow channel. The systems and methods described herein permit the deposition of a continuous channel film layer proximate both the memory cells and the SGD.