公开(公告)号：US20170123946A1

公开(公告)日：2017-05-04

申请号：US14932870

申请日：2015-11-04

Applicant: Intel Corporation

Inventor： Ning Wu ,  Xin Guo ,  Ramkarthik Ganesan ,  Pranav Kalavade ,  Robert Frickey

IPC: G06F11/20

CPC classification number: G06F11/2094 ,  G06F11/141 ,  G06F11/1441 ,  G06F12/0238 ,  G06F12/0804 ,  G06F12/0868 ,  G06F2201/805 ,  G06F2212/1016 ,  G06F2212/1032 ,  G06F2212/1044 ,  G06F2212/1048 ,  G06F2212/214 ,  G06F2212/222 ,  G06F2212/7203 ,  G06F2212/7204 ,  G06F2212/7211 ,  G11C2211/5641

Abstract: Technology for an apparatus is described. The apparatus can include a first non-volatile memory, a second non-volatile memory to have a write access time faster than the first non-volatile memory, and a memory controller. The memory controller can be configured to detect corrupted data in a selected data region in the first non-volatile memory. The selected data region can be associated with an increased risk of data corruption after data is written from the second non-volatile memory to the first non-volatile memory. Uncorrupted data in the second non-volatile memory that corresponds to the corrupted data in the first non-volatile memory can be identified. Data recovery in the first non-volatile memory can be performed by replacing the corrupted data in the first non-volatile memory with uncorrupted data from the second non-volatile memory.

公开(公告)号：US10303571B2

公开(公告)日：2019-05-28

申请号：US14932870

申请日：2015-11-04

Applicant: Intel Corporation

Inventor： Ning Wu ,  Xin Guo ,  Ramkarthik Ganesan ,  Pranav Kalavade ,  Robert Frickey

IPC: G06F11/00 ,  G06F11/20 ,  G06F12/02 ,  G06F11/14 ,  G06F12/0804 ,  G06F12/0868

Abstract: Technology for an apparatus is described. The apparatus can include a first non-volatile memory, a second non-volatile memory to have a write access time faster than the first non-volatile memory, and a memory controller. The memory controller can be configured to detect corrupted data in a selected data region in the first non-volatile memory. The selected data region can be associated with an increased risk of data corruption after data is written from the second non-volatile memory to the first non-volatile memory. Uncorrupted data in the second non-volatile memory that corresponds to the corrupted data in the first non-volatile memory can be identified. Data recovery in the first non-volatile memory can be performed by replacing the corrupted data in the first non-volatile memory with uncorrupted data from the second non-volatile memory.