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公开(公告)号:US12089411B2
公开(公告)日:2024-09-10
申请号:US16910020
申请日:2020-06-23
Applicant: Intel Corporation
Inventor: Tanuj Trivedi , Walid M. Hafez , Rohan Bambery , Daniel B. O'Brien , Christopher Alan Nolph , Rahul Ramaswamy , Ting Chang
CPC classification number: H10B43/30 , H01L28/60 , H01L29/40117 , H01L29/66795 , H01L29/66833 , H01L29/7851 , H01L29/792
Abstract: Embodiments disclosed herein include a semiconductor device and methods of forming such a device. In an embodiment, the semiconductor device comprises a substrate and a transistor on the substrate. In an embodiment, the transistor comprises a first gate electrode, where the first gate electrode is part of a first array of gate electrodes with a first pitch. In an embodiment, the first gate electrode has a first average grain size. In an embodiment, the semiconductor device further comprises a component cell on the substrate. In an embodiment, the component cell comprises a second gate electrode, where the second gate electrode is part of a second array of gate electrodes with a second pitch that is larger than the first pitch. In an embodiment, the second gate electrode has a second average grain size that is larger than the first average grain size.