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公开(公告)号:US20240088132A1
公开(公告)日:2024-03-14
申请号:US17943819
申请日:2022-09-13
Applicant: Intel Corporation
Inventor: Nicholas A. Thomson , Kalyan C. Kolluru , Ayan Kar , Chu-Hsin Liang , Benjamin Orr , Biswajeet Guha , Brian Greene , Chung-Hsun Lin , Sabih U. Omar , Sameer Jayanta Joglekar
IPC: H01L27/02 , H01L29/06 , H01L29/861
CPC classification number: H01L27/0255 , H01L29/0673 , H01L29/8611
Abstract: An integrated circuit structure includes a sub-fin having (i) a first portion including a p-type dopant and (ii) a second portion including an n-type dopant. A first body of semiconductor material is above the first portion of the sub-fin, and a second body of semiconductor material is above the second portion of the sub-fin. In an example, the first portion of the sub-fin and the second portion of the sub-fin are in contact with each other, to form a PN junction of a diode. For example, the first portion of the sub-fin is part of an anode of the diode, and wherein the second portion of the sub-fin is part of a cathode of the diode.