公开(公告)号：US10290557B2

公开(公告)日：2019-05-14

申请号：US15549970

申请日：2015-03-09

Applicant: Intel Corporation

Inventor： Brandon C. Marin ,  Trina Ghosh Dastidar ,  Dilan Seneviratne ,  Yonggang Li ,  Sirisha Chava

IPC: H05K3/10 ,  H01L23/14 ,  H05K3/06 ,  H05K3/18 ,  H01L23/498 ,  H01L21/48

Abstract: Embodiments of the present disclosure describe selective metallization of an integrated circuit (IC) substrate. In one embodiment, an integrated circuit (IC) substrate may include a dielectric material and metal crystals having a polyhedral shape dispersed in the dielectric material and bonded with a ligand that is to ablate when exposed to laser light such that the metal crystals having the ablated ligand are activated to provide a catalyst for selective electroless deposition of a metal. Other embodiments may be described and/or claimed.