PHOTONIC INTEGRATED CIRCUIT PACKAGES INCLUDING SUBSTRATES WITH GLASS CORES

    公开(公告)号:US20240176070A1

    公开(公告)日:2024-05-30

    申请号:US18059057

    申请日:2022-11-28

    申请人: Intel Corporation

    IPC分类号: G02B6/12 H01L25/16

    CPC分类号: G02B6/12004 H01L25/167

    摘要: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a photonic assembly may include a substrate having a core with a surface, wherein a material of the core includes glass; and a dielectric material on a portion of the surface of the core, the dielectric material including conductive pathways; a photonic integrated circuit (PIC) electrically coupled to the conductive pathways in the dielectric material; a first optical component between the PIC and the surface of the core, wherein the first optical component is coupled to the surface of the core by optical glue or by fusion bonding; and a second optical component coupled to the core, wherein the second optical component is optically coupled to the PIC by an optical pathway through the core and the first optical component.

    ELECTRONIC DEVICE PACKAGE INCLUDING A CAPACITOR

    公开(公告)号:US20200312793A1

    公开(公告)日:2020-10-01

    申请号:US16369708

    申请日:2019-03-29

    申请人: Intel Corporation

    摘要: A substrate for an electronic device may include a first layer, a second layer, and may include a third layer. The first layer may include a capacitive material, and the capacitive material may be segmented into a first section, and a second section. Each of the first section and the second section may include a first surface and a second surface. The second layer may include a first conductor. The third layer may include a second conductor. The first surface of the second section of capacitive material may be directly coupled to the first conductor. The second surface of the second section of the capacitive material may be directly coupled to the second conductor. A first filler region may include a dielectric material and the first filler region may be located in a first gap between the first section of capacitive material and the second section of capacitive material.