公开(公告)号：US20180007782A1

公开(公告)日：2018-01-04

申请号：US15201422

申请日：2016-07-02

Applicant: Intel Corporation

Inventor： ZHICHAO ZHANG ,  XIANG LI ,  KEMAL AYGUN ,  ZHIGUO QIAN ,  TOLGA MEMIOGLU

IPC: H05K1/02 ,  G11C5/06 ,  G06F1/16 ,  G11C5/04 ,  H05K1/18 ,  H01R12/73

CPC classification number: G06F1/16 ,  G11C5/04 ,  G11C5/06 ,  G11C5/063 ,  H01R13/6464 ,  H05K1/0231 ,  H05K1/117 ,  H05K1/141 ,  H05K1/162 ,  H05K2201/10159 ,  H05K2201/10189

Abstract: One embodiment provides an apparatus. The apparatus includes a dual in-line memory module (DIMM). The DIMM includes at least one memory module integrated circuit (IC); a DIMM printed circuit board (PCB); a plurality of DIMM PCB contacts; and a capacitive structure. Each DIMM PCB contact is to couple the memory module IC to a respective DIMM connector pin. The capacitive structure is to provide a mutual capacitance between a first DIMM connector signal pin and a second DIMM connector signal pin.