公开(公告)号：US20230092492A1

公开(公告)日：2023-03-23

申请号：US17480064

申请日：2021-09-20

Applicant: Intel Corporation

Inventor： Xin Ning ,  Brandon C. Marin ,  Kyu Oh Lee ,  Siddharth K. Alur ,  Numair Ahmed ,  Brent Williams ,  Mollie Stewart ,  Nathan Ou ,  Cary Kuliasha

IPC: H01L23/64 ,  H01F27/28 ,  H01L49/02 ,  H01L23/498 ,  H01L21/48

Abstract: Transmission pathways in substrates, and associated methods are shown. Example transmission pathways include a semiconductor substrate with a core, a dielectric layer fixed on the core, at least one first electrical transmission pathway extending through at least one of the dielectric layer and the core. The first pathway includes a magnetic material disposed within the at least the core of the at least one first electrical transmission pathway, at least one second electrical transmission pathway extending through the magnetic material, a nickel layer disposed on inner circumferential surface of the magnetic material at least within the second electrical transmission pathway, a copper layer disposed on at least the nickel layer within the second electrical transmission pathway. The dielectric spacer or the nickel layer separates the copper layer from the magnetic material. At least one third pathway extends through at least one of the dielectric layer and the core separate from the at least one electrical transmission pathway.

公开(公告)号：US12224253B2

公开(公告)日：2025-02-11

申请号：US17480064

申请日：2021-09-20

Applicant: Intel Corporation

Inventor： Xin Ning ,  Brandon C. Marin ,  Kyu Oh Lee ,  Siddharth K. Alur ,  Numair Ahmed ,  Brent Williams ,  Mollie Stewart ,  Nathan Ou ,  Cary Kuliasha

IPC: H01L23/64 ,  H01F27/28 ,  H01L21/48 ,  H01L23/498 ,  H01L49/02

Abstract: Transmission pathways in substrates, and associated methods are shown. Example transmission pathways include a semiconductor substrate with a core, a dielectric layer fixed on the core, at least one first electrical transmission pathway extending through at least one of the dielectric layer and the core. The first pathway includes a magnetic material disposed within the at least the core of the at least one first electrical transmission pathway, at least one second electrical transmission pathway extending through the magnetic material, a nickel layer disposed on inner circumferential surface of the magnetic material at least within the second electrical transmission pathway, a copper layer disposed on at least the nickel layer within the second electrical transmission pathway. The dielectric spacer or the nickel layer separates the copper layer from the magnetic material. At least one third pathway extends through at least one of the dielectric layer and the core separate from the at least one electrical transmission pathway.

公开(公告)号：US20220406512A1

公开(公告)日：2022-12-22

申请号：US17352952

申请日：2021-06-21

Applicant: Intel Corporation

Inventor： Xin Ning ,  Kyu-oh Lee ,  Brent Williams ,  Brandon C. Marin ,  Tarek A. Ibrahim ,  Krishna Bharath ,  Sai Vadlamani

IPC: H01F27/255 ,  H01F27/29 ,  H01F27/28 ,  H01F41/04 ,  H01F41/02

Abstract: Techniques and mechanisms for providing structures of a magnetic material based inductor. In an embodiment, an inductor comprises a body of a magnetic material, and a conductor which extends along a surface of the body. The body comprises a carrier material and magnetic filler particles distributed in the carrier material. A passivation material of the inductor is provided adjacent to the conductor and to surfaces of the filler particles. The conductor and the passivation material comprise different respective material compositions, wherein the passivation material comprises one of nickel, tin, copper, palladium, or gold. In another embodiment, the inductor is one of a plated through hole inductor type of a planar inductor type.