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公开(公告)号:US20230041115A1
公开(公告)日:2023-02-09
申请号:US17794856
申请日:2020-02-24
Applicant: Intel Corporation
Inventor: Ping WU , Yingwen CHEN , Lei ZHU , Zhenglong WU , Tao XU
IPC: G06F9/4401 , G06F9/50
Abstract: Systems, apparatuses and methods may provide for technology that initializes an integrated memory of a processor during a boot sequence and conducts a runtime initialization of an external system memory associated with the processor. The technology may also bypass the runtime initialization of the external system memory during the boot sequence.
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公开(公告)号:US20210191829A1
公开(公告)日:2021-06-24
申请号:US17262696
申请日:2018-09-15
Applicant: INTEL CORPORATION
Inventor: Satish MUTHIYALU , Yingwen CHEN , Yu YU , Tao XU
Abstract: Runtime memory cell row defect detection and replacement includes detecting in a memory of a computer system operating in a runtime operating system mode, a defective row of memory cells having at least one defective cell. In response to the detection of the defective row, interrupting the operating system of the computer system and, in a runtime system maintenance mode, replacing the defective row of memory cells with a spare row of memory cells as a replacement row of memory cells. Execution of the operating system is then resumed in the runtime operating system mode Other aspects and advantages are described.
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