POWER ENHANCED STACKED CHIP SCALE PACKAGE SOLUTION WITH INTEGRATED DIE ATTACH FILM

    公开(公告)号:US20220230995A1

    公开(公告)日:2022-07-21

    申请号:US17714979

    申请日:2022-04-06

    Abstract: An apparatus comprising: a die stack comprising at least one die pair, the at least one die pair having a first die over a second die, the first die and the second die both having a first surface and a second surface, the second surface of the first die over the first surface of the second die; and an adhesive film between the first die and the second die of the at least one die pair; wherein the adhesive film comprises an insulating layer and a conductive layer, the insulating layer adhering to the second surface of the first die and the conductive layer adhering to the first surface of the second die.

    Power enhanced stacked chip scale package solution with integrated die attach film

    公开(公告)号:US11302671B2

    公开(公告)日:2022-04-12

    申请号:US16641221

    申请日:2017-09-29

    Abstract: An apparatus comprising: a die stack comprising at least one die pair, the at least one die pair having a first die over a second die, the first die and the second die both having a first surface and a second surface, the second surface of the first die over the first surface of the second die; and an adhesive film between the first die and the second die of the at least one die pair; wherein the adhesive film comprises an insulating layer and a conductive layer, the insulating layer adhering to the second surface of the first die and the conductive layer adhering to the first surface of the second die.

    Interconnect structure fabricated using lithographic and deposition processes

    公开(公告)号:US11742284B2

    公开(公告)日:2023-08-29

    申请号:US17053144

    申请日:2018-12-12

    CPC classification number: H01L23/525 H01L24/48 H01L25/0657 H01L2924/15311

    Abstract: Embodiments described herein provide techniques of forming an interconnect structure using lithographic and deposition processes. The interconnect structure can be used to couple components of a semiconductor package. For one example, a semiconductor package includes a die stack and an interconnect structure formed on the die stack. The die stack comprises a plurality of dies. Each die in the die stack comprises: a first surface; a second surface opposite the first surface; sidewall surfaces coupling the first surface to the second surface; and a pad on the first surface. A one sidewall surface of one of the dies has a sloped profile. The semiconductor package also includes an interconnect structure positioned on the first surfaces and the sidewall with the sloped profile. In this semiconductor package, the interconnect structure electrically couples the pad on each of the dies to each other.

    POWER ENHANCED STACKED CHIP SCALE PACKAGE SOLUTION WITH INTEGRATED DIE ATTACH FILM

    公开(公告)号:US20200227387A1

    公开(公告)日:2020-07-16

    申请号:US16641221

    申请日:2017-09-29

    Abstract: An apparatus comprising: a die stack comprising at least one die pair, the at least one die pair having a first die over a second die, the first die and the second die both having a first surface and a second surface, the second surface of the first die over the first surface of the second die; and an adhesive film between the first die and the second die of the at least one die pair; wherein the adhesive film comprises an insulating layer and a conductive layer, the insulating layer adhering to the second surface of the first die and the conductive layer adhering to the first surface of the second die.

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