公开(公告)号：US20140174481A1

公开(公告)日：2014-06-26

申请号：US14189014

申请日：2014-02-25

Applicant: Intermolecular, Inc.

Inventor： Satbir Kahlon ,  Jeffrey Chih-Hou Lowe ,  Frank C. Ma ,  Sandeep Mariserla ,  Robert Anthony Sculac

IPC: H01L21/02

CPC classification number: H01L21/02041 ,  B08B3/04 ,  C11D11/0047 ,  C11D11/0064 ,  C11D11/007 ,  H01L21/67028 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6719

Abstract: The embodiments describe methods for controlling the particles generated when cleaning and drying a wafer in a spin rinse dryer (SRD) module. In some embodiments, the substrate surface is cooled by dispensing deionized (DI) water across the surface of the substrate, while the substrate rests on the SRD chuck. In addition, a method for controlling the particles generated when sleeves in a processing module or SRD contact a substrate surface during a clamping operation or when the sleeves are removed from the substrate surface is provided. A bottom edge or lip of the sleeves and/or the surface of the wafer contacting the sleeve is wetted during clamping/unclamping operations. Alternatively, the substrate may be wetted prior to clamping/unclamping operations.

Abstract translation: 实施例描述了用于控制在旋转冲洗干燥器（SRD）模块中清洁和干燥晶片时产生的颗粒的方法。 在一些实施例中，通过在衬底的表面上分配去离子（DI）水来冷却衬底表面，同时衬底搁置在SRD卡盘上。 此外，提供了一种用于控制在夹持操作期间或当衬套从衬底表面移除时在处理模块或SRD中的套筒接触衬底表面时产生的颗粒的方法。 在夹紧/松开操作期间，套筒的底部边缘或/或与晶片接触的晶片表面被润湿。 或者，在夹紧/松开操作之前可以润湿基底。

公开(公告)号：US20140124038A1

公开(公告)日：2014-05-08

申请号：US13669664

申请日：2012-11-06

Applicant: INTERMOLECULAR, INC.

Inventor： Sandeep Mariserla ,  Aaron T. Francis ,  Jeffrey Chih-Hou Lowe ,  Robert Anthony Sculac

IPC: F17D1/08

CPC classification number: H01L21/67 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/67253 ,  H01L21/68785 ,  H01L22/20 ,  Y10T137/0396

Abstract: Methods for combinatorially processing semiconductor substrates are provided. The methods may involve receiving a substrate into a combinatorial processing chamber and sealing a plurality of flow cells against a surface of the substrate. The plurality of flow cells is enclosed within the combinatorial processing chamber to define an enclosed external environment for the plurality of flow cells. A pressure differential is created between a reaction area of the plurality of flow cells of the combinatorial processing chamber and the external environment, wherein each flow cells of the plurality of flow cells defines a site isolating region of die substrate. The regions the substrate are then combinatorially processed.

Abstract translation: 提供了组合处理半导体衬底的方法。 所述方法可以包括将基底接收到组合处理室中并将多个流动池密封抵靠基板的表面。 多个流动池被封闭在组合处理室内以限定多个流动池的封闭的外部环境。 在组合处理室的多个流动池的反应区域和外部环境之间产生压力差，其中多个流动池中的每个流动池限定管芯基板的位置隔离区域。 然后将基底的区域组合处理。

公开(公告)号：US20140188264A1

公开(公告)日：2014-07-03

申请号：US13727896

申请日：2012-12-27

Applicant: Intermolecular, Inc.

Inventor： Harikrishanan Rajagopal ,  Yoshiki E. Ashizawa ,  Joseph M. Jackson ,  Sandeep Mariserla ,  Heng Cheng Pai ,  Radha Subrahmanyan ,  Karen Yang

IPC: H01L21/66

CPC classification number: H01L23/544 ,  G05B19/41865 ,  H01L2223/54413 ,  H01L2223/54433 ,  H01L2924/0002 ,  Y02P80/40 ,  Y02P90/20 ,  H01L2924/00

Abstract: Methods of semiconductor processing are described. An experiment is designed for each process of a semiconductor substrate, which are implemented on respective multiple regions of the semiconductor substrate. A unique identifier is assigned to the semiconductor substrate. The respective design of experiment is implemented for each of the processes of the semiconductor substrate. Process criteria for each process is recorded, where the recording is associated with the assigned unique identifier. Process information is retrieved for each process, via its respective assigned unique identifier.

Abstract translation: 描述半导体处理方法。 针对在半导体衬底的相应多个区域上实现的半导体衬底的每个工艺设计实验。 将独特的标识符分配给半导体衬底。 对于半导体衬底的每个工艺实现相应的实验设计。 记录每个处理的处理标准，其中记录与分配的唯一标识符相关联。 通过其各自分配的唯一标识符为每个进程检索处理信息。

公开(公告)号：US20130115779A1

公开(公告)日：2013-05-09

申请号：US13662078

申请日：2012-10-26

Applicant: Intermolecular, Inc.

Inventor： Gregory P. Lim ,  Jeffrey Chih-Hou Lowe ,  Sandeep Mariserla ,  Robert Anthony Sculac

IPC: H01L21/306 ,  H01L21/308

CPC classification number: H01L21/67057 ,  H01L21/67086 ,  H01L21/67126

Abstract: In some embodiments, the present invention discloses sealing mechanisms for generating site isolated regions on a substrate, allowing combinatorial processing without cross contamination between regions. The sealing mechanism can include a thin sharp edge ring for pressing on the substrate surface with small contact area. The small sealing area can concentrate the sealing force, generating higher contact pressure to guard against fluid leakage across the sealing surface, for example, eliminating fluid wicking at the seal interface through capillary action. The sealing mechanism can include multiple protrusions, which contacts the substrate leaving a small gap at the remaining portion of the sealing mechanism. The sealing mechanism can include minimal contact points with the substrate, which can significantly reduce the particle generation during processing. A pressure differential can be established across the sealing surface to prevent fluid leakage.

Abstract translation: 在一些实施例中，本发明公开了用于在基底上产生位置隔离区域的密封机构，允许组合处理，而不会在区域之间产生交叉污染。 密封机构可以包括用于以小的接触面积压在基板表面上的薄的尖锐边缘环。 小密封区域可以集中密封力，产生更高的接触压力，以防止渗透密封表面的流体泄漏，例如，通过毛细作用消除密封界面处的流体芯吸。 密封机构可以包括多个突起，其与衬底接触，在密封机构的剩余部分处留下小间隙。 密封机构可以包括与基底的最小接触点，这可显着减少加工期间的颗粒产生。 可以跨越密封表面建立压力差，以防止流体泄漏。

公开(公告)号：US08663397B1

公开(公告)日：2014-03-04

申请号：US13657261

申请日：2012-10-22

Applicant: Intermolecular, Inc.

Inventor： Satbir Kahlon ,  Jeffrey Chih-Hou Lowe ,  Frank C. Ma ,  Sandeep Mariserla ,  Robert Anthony Sculac

IPC: B08B3/04

CPC classification number: H01L21/02041 ,  B08B3/04 ,  C11D11/0047 ,  C11D11/0064 ,  C11D11/007 ,  H01L21/67028 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6719

Abstract: The embodiments describe methods for controlling the particles generated when cleaning and drying a wafer in a spin rinse dryer (SRD) module. In some embodiments, the substrate surface is cooled by dispensing deionized (DI) water across the surface of the substrate, while the substrate rests on the SRD chuck. In addition, a method for controlling the particles generated when sleeves in a processing module or SRD contact a substrate surface during a clamping operation or when the sleeves are removed from the substrate surface is provided. A bottom edge or lip of the sleeves and/or the surface of the wafer contacting the sleeve is wetted during clamping/unclamping operations. Alternatively, the substrate may be wetted prior to clamping/unclamping operations.

Abstract translation: 实施例描述了用于控制在旋转冲洗干燥器（SRD）模块中清洁和干燥晶片时产生的颗粒的方法。 在一些实施例中，通过在衬底的表面上分配去离子（DI）水来冷却衬底表面，同时衬底搁置在SRD卡盘上。 此外，提供了一种用于控制在夹持操作期间或当衬套从衬底表面移除时在处理模块或SRD中的套筒接触衬底表面时产生的颗粒的方法。 在夹紧/松开操作期间，套筒的底部边缘或/或与晶片接触的晶片表面被润湿。 或者，在夹紧/松开操作之前可以润湿基底。

公开(公告)号：US08835329B2

公开(公告)日：2014-09-16

申请号：US13669664

申请日：2012-11-06

Applicant: Intermolecular, Inc.

Inventor： Sandeep Mariserla ,  Aaron T. Francis ,  Jeffrey Chih-Hou Lowe ,  Robert Anthony Sculac

IPC: H01L21/302

CPC classification number: H01L21/67 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/67253 ,  H01L21/68785 ,  H01L22/20 ,  Y10T137/0396

Abstract: Methods for combinatorially processing semiconductor substrates are provided. The methods may involve receiving a substrate into a combinatorial processing chamber and sealing a plurality of flow cells against a surface of the substrate. The plurality of flow cells is enclosed within the combinatorial processing chamber to define an enclosed external environment for the plurality of flow cells. A pressure differential is created between a reaction area of the plurality of flow cells of the combinatorial processing chamber and the external environment, wherein each flow cells of the plurality of flow cells defines a site isolating region of the substrate. The regions the substrate are then combinatorially processed.

Abstract translation: 提供了组合处理半导体衬底的方法。 所述方法可以包括将基底接收到组合处理室中并将多个流动池密封抵靠基板的表面。 多个流动池被封闭在组合处理室内以限定多个流动池的封闭的外部环境。 在组合处理室的多个流动池的反应区域和外部环境之间产生压力差，其中多个流动池中的每个流动池限定基板的位置隔离区域。 然后将基底的区域组合处理。