摘要:
The embodiments describe methods for controlling the particles generated when cleaning and drying a wafer in a spin rinse dryer (SRD) module. In some embodiments, the substrate surface is cooled by dispensing deionized (DI) water across the surface of the substrate, while the substrate rests on the SRD chuck. In addition, a method for controlling the particles generated when sleeves in a processing module or SRD contact a substrate surface during a clamping operation or when the sleeves are removed from the substrate surface is provided. A bottom edge or lip of the sleeves and/or the surface of the wafer contacting the sleeve is wetted during clamping/unclamping operations. Alternatively, the substrate may be wetted prior to clamping/unclamping operations.
摘要:
The embodiments describe methods for controlling the particles generated when cleaning and drying a wafer in a spin rinse dryer (SRD) module. In some embodiments, the substrate surface is cooled by dispensing deionized (DI) water across the surface of the substrate, while the substrate rests on the SRD chuck. In addition, a method for controlling the particles generated when sleeves in a processing module or SRD contact a substrate surface during a clamping operation or when the sleeves are removed from the substrate surface is provided. A bottom edge or lip of the sleeves and/or the surface of the wafer contacting the sleeve is wetted during clamping/unclamping operations. Alternatively, the substrate may be wetted prior to clamping/unclamping operations.
摘要:
Polishing and cleaning techniques are combinatorially processed and evaluated. A polishing system can include a reactor assembly having multiple reaction chambers, with at least a reaction chamber including a rotatable polishing head, slurry and chemical distribution, chemical and water rinse, and slurry and fluid removal. Different downward forces can be applied to the polishing heads for evaluating optimum process conditions. Channels in the polishing pads can redistribute slurry and chemical to the polishing area.
摘要:
Polishing and cleaning techniques are combinatorially processed and evaluated. A polishing system can include a reactor assembly having multiple reaction chambers, with at least a reaction chamber including a rotatable polishing head, slurry and chemical distribution, chemical and water rinse, and slurry and fluid removal. Different downward forces can be applied to the polishing heads for evaluating optimum process conditions. Channels in the polishing pads can redistribute slurry and chemical to the polishing area.