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公开(公告)号：US09246096B2
公开(公告)日：2016-01-26
申请号：US14624295
申请日：2015-02-17
发明人： Zhendong Hong , Vidyut Gopal , Imran Hashim , Randall J. Higuchi , Tim Minvielle , Hieu Pham , Takeshi Yamaguchi
IPC分类号： H01L29/768 , H01L29/40 , H01L21/8222 , H01L21/20 , H01L45/00 , H01L27/24
CPC分类号： H01L45/146 , H01L27/2463 , H01L45/04 , H01L45/08 , H01L45/1233 , H01L45/1616
摘要： Embodiments of the invention generally relate to nonvolatile memory devices and methods for manufacturing such memory devices. The methods for forming improved memory devices, such as a ReRAM cells, provide optimized, atomic layer deposition (ALD) processes for forming a metal oxide film stack which contains at least one hard metal oxide film (e.g., metal is completely oxidized or substantially oxidized) and at least one soft metal oxide film (e.g., metal is less oxidized than hard metal oxide). The soft metal oxide film is less electrically resistive than the hard metal oxide film since the soft metal oxide film is less oxidized or more metallic than the hard metal oxide film. In one example, the hard metal oxide film is formed by an ALD process utilizing ozone as the oxidizing agent while the soft metal oxide film is formed by another ALD process utilizing water vapor as the oxidizing agent.
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2.发明授权Using saturated and unsaturated ALD processes to deposit oxides as ReRAM switching layer 有权使用饱和和不饱和的ALD工艺将氧化物沉积为ReRAM开关层公开(公告)号：US09040413B2
公开(公告)日：2015-05-26
申请号：US13714162
申请日：2012-12-13
发明人： Randall J. Higuchi , Chien-Lan Hsueh , Yun Wang
CPC分类号： H01L45/1608 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/10 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/1616
摘要： A nonvolatile memory device contains a resistive switching memory element with improved device switching performance and lifetime by custom tailoring the average concentration of defects in the resistive switching film and methods of forming the same. The nonvolatile memory element includes a first electrode layer, a second electrode layer, and a resistive switching layer disposed between the first electrode layer and the second electrode layer. The resistive switching layer comprises a first sub-layer and a second sub-layer, wherein the first sub-layer has more defects than the first sub-layer. A method includes forming a first sub-layer on the first electrode layer by a first ALD process and forming a second sub-layer on the first sub-layer by a second ALD process, where the first sub-layer has a different amount of defects than the second sub-layer.
摘要翻译： 非易失性存储器件包含电阻式开关存储器元件，通过定制电阻式开关膜中的平均缺陷浓度及其形成方法，具有改进的器件切换性能和寿命。 非易失性存储元件包括设置在第一电极层和第二电极层之间的第一电极层，第二电极层和电阻开关层。 电阻开关层包括第一子层和第二子层，其中第一子层具有比第一子层更多的缺陷。 一种方法包括通过第一ALD工艺在第一电极层上形成第一子层，并通过第二ALD工艺在第一子层上形成第二子层，其中第一子层具有不同的缺陷量 比第二个子层。
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3.发明授权Metal aluminum nitride embedded resistors for resistive random memory access cells 有权用于电阻式随机存储器存取单元的金属氮化铝嵌入式电阻器公开(公告)号：US09006696B2
公开(公告)日：2015-04-14
申请号：US14480025
申请日：2014-09-08
CPC分类号： H01L45/165 , H01L27/2409 , H01L45/08 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/147 , H01L45/1616 , H01L45/1625
摘要： Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and resistive switching layer connected in series. The embedded resistor prevents excessive electrical currents through the resistive switching layer, especially when the resistive switching layer is switched into its low resistive state, thereby preventing over-programming. The embedded resistor includes aluminum, nitrogen, and one or more additional metals (other than aluminum). The concentration of each component is controlled to achieve desired resistivity and stability of the embedded resistor. In some embodiments, the resistivity ranges from 0.1 Ohm-centimeter to 40 Ohm-centimeter and remains substantially constant while applying an electrical field of up 8 mega-Volts/centimeter to the embedded resistor. The embedded resistor may be made from an amorphous material, and the material is operable to remain amorphous even when subjected to typical annealing conditions.
摘要翻译： 提供了电阻随机存取存储器（ReRAM）单元及其制造方法。 ReRAM单元包括串联连接的嵌入式电阻和电阻开关层。 嵌入式电阻器阻止通过电阻开关层的过多电流，特别是当电阻式开关层切换到其低电阻状态时，从而防止过度编程。 嵌入式电阻器包括铝，氮和一种或多种另外的金属（除铝以外）。 控制每个组分的浓度以实现嵌入式电阻器的期望的电阻率和稳定性。 在一些实施例中，电阻率范围为0.1欧姆至40欧姆厘米，并且在施加高达8兆伏特/厘米的电场到嵌入式电阻器时保持基本恒定。 嵌入式电阻器可以由非晶材料制成，并且即使经受典型的退火条件，该材料也可操作以保持非晶态。
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4.发明授权Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition 有权使用原子层沉积控制电阻式开关层中的多种氧化物的组成公开(公告)号：US09065040B2
公开(公告)日：2015-06-23
申请号：US14510390
申请日：2014-10-09
CPC分类号： H01L45/085 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/1616
摘要： A method of fabricating a resistive random access memory (ReRAM) cell may include forming a set of nanolaminate structures over an electrode, such that each structure includes at least one first element oxide layer and at least one second element oxide layer. The overall set is operable as a resistive switching layer in a ReRAM cell. In this set, an average atomic ratio of the first element to the second element is different in at least two nanolaminate structures. This ratio may be less in nanolaminate structures that are closer to electrodes than in the middle nanolaminate structures. Alternatively, this ratio may increase from one end of the set to another. The first element may be less electronegative than the second elements. The first element may be hafnium, while the second element may be one of zirconium, aluminum, titanium, tantalum, or silicon.
摘要翻译： 制造电阻随机存取存储器（ReRAM）单元的方法可以包括在电极上形成一组纳米级氨基酸结构，使得每个结构包括至少一个第一元件氧化物层和至少一个第二元件氧化物层。 整个集合可用作ReRAM单元中的电阻式开关层。 在该组中，第一元素与第二元素的平均原子比在至少两个纳米层间结构中不同。 在比中间的Nanolaminate结构中更接近于电极的纳米酸盐结构中，该比例可能更小。 或者，该比率可以从集合的一端增加到另一端。 第一元素可能比第二元素具有更少的电负性。 第一元素可以是铪，而第二元素可以是锆，铝，钛，钽或硅中的一种。
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5.发明申请CONTROLLING COMPOSITION OF MULTIPLE OXIDES IN RESISTIVE SWITCHING LAYERS USING ATOMIC LAYER DEPOSITION 审中-公开使用原子沉积法控制电阻式切换层中多种氧化物的组成公开(公告)号：US20150060753A1
公开(公告)日：2015-03-05
申请号：US14510390
申请日：2014-10-09
IPC分类号： H01L45/00
CPC分类号： H01L45/085 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/1616
摘要： A method of fabricating a resistive random access memory (ReRAM) cell may include forming a set of nanolaminate structures over an electrode, such that each structure includes at least one first element oxide layer and at least one second element oxide layer. The overall set is operable as a resistive switching layer in a ReRAM cell. In this set, an average atomic ratio of the first element to the second element is different in at least two nanolaminate structures. This ratio may be less in nanolaminate structures that are closer to electrodes than in the middle nanolaminate structures. Alternatively, this ratio may increase from one end of the set to another. The first element may be less electronegative than the second elements. The first element may be hafnium, while the second element may be one of zirconium, aluminum, titanium, tantalum, or silicon.
摘要翻译： 制造电阻随机存取存储器（ReRAM）单元的方法可以包括在电极上形成一组纳米级氨基酸结构，使得每个结构包括至少一个第一元件氧化物层和至少一个第二元件氧化物层。 整个集合可用作ReRAM单元中的电阻式开关层。 在该组中，第一元素与第二元素的平均原子比在至少两个纳米层间结构中不同。 在比中间的Nanolaminate结构中更接近于电极的纳米酸盐结构中，该比例可能更小。 或者，该比率可以从集合的一端增加到另一端。 第一元素可能比第二元素具有更少的电负性。 第一元素可以是铪，而第二元素可以是锆，铝，钛，钽或硅中的一种。
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公开(公告)号：US20140363920A1
公开(公告)日：2014-12-11
申请号：US14466695
申请日：2014-08-22
发明人： Zhendong Hong , Vidyut Gopal , Imran Hashim , Randall J. Higuchi , Tim Minvielle , Hieu Pham , Takeshi Yamaguchi
IPC分类号： H01L45/00
CPC分类号： H01L45/146 , H01L27/2463 , H01L45/04 , H01L45/08 , H01L45/1233 , H01L45/1616
摘要： Embodiments of the invention generally relate to nonvolatile memory devices and methods for manufacturing such memory devices. The methods for forming improved memory devices, such as a ReRAM cells, provide optimized, atomic layer deposition (ALD) processes for forming a metal oxide film stack which contains at least one hard metal oxide film (e.g., metal is completely oxidized or substantially oxidized) and at least one soft metal oxide film (e.g., metal is less oxidized than hard metal oxide). The soft metal oxide film is less electrically resistive than the hard metal oxide film since the soft metal oxide film is less oxidized or more metallic than the hard metal oxide film. In one example, the hard metal oxide film is formed by an ALD process utilizing ozone as the oxidizing agent while the soft metal oxide film is formed by another ALD process utilizing water vapor as the oxidizing agent.
摘要翻译： 本发明的实施例一般涉及用于制造这种存储器件的非易失性存储器件和方法。 用于形成改进的存储器件（例如ReRAM单元）的方法提供优化的原子层沉积（ALD）工艺，用于形成金属氧化物膜堆叠，其包含至少一个硬金属氧化物膜（例如，金属被完全氧化或基本上被氧化 ）和至少一种软金属氧化物膜（例如，金属比硬金属氧化物氧化较少）。 由于软金属氧化物膜比硬金属氧化物膜氧化得更少或更金属，所以软金属氧化物膜的电阻小于硬金属氧化物膜。 在一个实例中，通过利用臭氧作为氧化剂的ALD工艺形成硬质金属氧化物膜，而通过利用水蒸汽作为氧化剂的另一ALD工艺形成软金属氧化物膜。
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7.发明授权Metal aluminum nitride embedded resistors for resistive random memory access cells 有权用于电阻式随机存储器存取单元的金属氮化铝嵌入式电阻器公开(公告)号：US08853661B1
公开(公告)日：2014-10-07
申请号：US13835256
申请日：2013-03-15
CPC分类号： H01L45/165 , H01L27/2409 , H01L45/08 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/147 , H01L45/1616 , H01L45/1625
摘要： Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and resistive switching layer connected in series. The embedded resistor prevents excessive electrical currents through the resistive switching layer, especially when the resistive switching layer is switched into its low resistive state, thereby preventing over-programming. The embedded resistor includes aluminum, nitrogen, and one or more additional metals (other than aluminum). The concentration of each component is controlled to achieve desired resistivity and stability of the embedded resistor. In some embodiments, the resistivity ranges from 0.1 Ohm-centimeter to 40 Ohm-centimeter and remains substantially constant while applying an electrical field of up 8 mega-Volts/centimeter to the embedded resistor. The embedded resistor may be made from an amorphous material, and the material is operable to remain amorphous even when subjected to typical annealing conditions.
摘要翻译： 提供了电阻随机存取存储器（ReRAM）单元及其制造方法。 ReRAM单元包括串联连接的嵌入式电阻和电阻开关层。 嵌入式电阻器阻止通过电阻开关层的过多电流，特别是当电阻式开关层切换到其低电阻状态时，从而防止过度编程。 嵌入式电阻器包括铝，氮和一种或多种另外的金属（除铝以外）。 控制每个组分的浓度以实现嵌入式电阻器的期望的电阻率和稳定性。 在一些实施例中，电阻率范围为0.1欧姆至40欧姆厘米，并且在施加高达8兆伏特/厘米的电场到嵌入式电阻器时保持基本恒定。 嵌入式电阻器可以由非晶材料制成，并且即使经受典型的退火条件，该材料也可操作以保持非晶态。
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公开(公告)号：US20140377931A1
公开(公告)日：2014-12-25
申请号：US14480025
申请日：2014-09-08
CPC分类号： H01L45/165 , H01L27/2409 , H01L45/08 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/147 , H01L45/1616 , H01L45/1625
摘要： Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and resistive switching layer connected in series. The embedded resistor prevents excessive electrical currents through the resistive switching layer, especially when the resistive switching layer is switched into its low resistive state, thereby preventing over-programming. The embedded resistor includes aluminum, nitrogen, and one or more additional metals (other than aluminum). The concentration of each component is controlled to achieve desired resistivity and stability of the embedded resistor. In some embodiments, the resistivity ranges from 0.1 Ohm-centimeter to 40 Ohm-centimeter and remains substantially constant while applying an electrical field of up 8 mega-Volts/centimeter to the embedded resistor. The embedded resistor may be made from an amorphous material, and the material is operable to remain amorphous even when subjected to typical annealing conditions.
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公开(公告)号：US20140175360A1
公开(公告)日：2014-06-26
申请号：US13721358
申请日：2012-12-20
发明人： Mihir Tendulkar , Vidyut Gopal , Imran Hashim , Randall J. Higuchi , Tim Minvielle , Yun Wang , Takeshi Yamaguchi
IPC分类号： H01L45/00
CPC分类号： H01L45/146 , H01L27/2481 , H01L45/08 , H01L45/10 , H01L45/1233 , H01L45/1625
摘要： Provided are resistive random access memory (ReRAM) cells having bi-layered metal oxide structures. The layers of a bi-layered structure may have different compositions and thicknesses. Specifically, one layer may be thinner than the other layer, sometimes as much as 5 to 20 times thinner. The thinner layer may be less than 30 Angstroms thick or even less than 10 Angstroms thick. The thinner layer is generally more oxygen rich than the thicker layer. Oxygen deficiency of the thinner layer may be less than 5 atomic percent or even less than 2 atomic percent. In some embodiments, a highest oxidation state metal oxide may be used to form a thinner layer. The thinner layer typically directly interfaces with one of the electrodes, such as an electrode made from doped polysilicon. Combining these specifically configured layers into the bi-layered structure allows improving forming and operating characteristics of ReRAM cells.
摘要翻译： 提供了具有双层金属氧化物结构的电阻随机存取存储器（ReRAM）单元。 双层结构的层可以具有不同的组成和厚度。 具体地说，一层可以比另一层薄一些，有时可以减薄5至20倍。 较薄的层可以小于30埃厚或甚至小于10埃厚。 较薄的层通常比较厚的层富氧。 较薄层的缺氧可能小于5原子％或甚至小于2原子％。 在一些实施方案中，可以使用最高氧化态金属氧化物来形成较薄的层。 较薄的层通常直接与一个电极（例如由掺杂多晶硅制成的电极）接合。 将这些特定配置的层组合成双层结构允许改善ReRAM单元的成形和操作特性。
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公开(公告)号：US09425394B2
公开(公告)日：2016-08-23
申请号：US14565712
申请日：2014-12-10
发明人： Brian Butcher , Randall J. Higuchi , Yun Wang
CPC分类号： H01L45/1616 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1641
摘要： Provided are methods of fabricating memory cells such as resistive random access memory (ReRAM) cells. A method involves forming a first layer including two high-k dielectric materials such that one material has a higher dielectric constant than the other material. In some embodiments, hafnium oxide and titanium oxide form the first layer. The higher-k material may be present at a lower concentration. In some embodiments, a concentration ratio of these two high-k materials is between about 3 and 7. The first layer may be formed using atomic layer deposition. The first layer is then annealed in an oxygen-containing environment. The method may proceed with forming a second layer including a low-k dielectric material, such as silicon oxide, and forming an electrode. After forming the electrode, the memory cell is annealed in a nitrogen containing environment. The nitrogen anneal may be performed at a higher temperature than the oxygen anneal.
摘要翻译： 提供制造诸如电阻随机存取存储器（ReRAM）单元的存储单元的方法。 一种方法包括形成包括两个高k介电材料的第一层，使得一种材料具有比其它材料更高的介电常数。 在一些实施方案中，氧化铪和氧化钛形成第一层。 较高k的材料可以以更低的浓度存在。 在一些实施方案中，这两种高k材料的浓度比在约3和7之间。第一层可以使用原子层沉积形成。 然后将第一层在含氧环境中退火。 该方法可以继续形成包括低k介电材料（例如氧化硅）的第二层，并形成电极。 在形成电极之后，在含氮环境中对存储单元进行退火。 氮退火可以在比氧退火更高的温度下进行。
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