TRUE RANDOM GENERATOR (TRNG) IN ML ACCELERATORS FOR NN DROPOUT AND INITIALIZATION

    公开(公告)号:US20180046597A1

    公开(公告)日:2018-02-15

    申请号:US15232177

    申请日:2016-08-09

    IPC分类号: G06F15/78 G06N3/063

    摘要: A random number signal generator used for performing dropout or weight initialization for a node in a neural network. The random number signal generator includes a transistor which generates a random noise signal. The transistor includes a substrate, source and drain regions formed in the substrate, a first insulating layer formed over a channel of the transistor, a first trapping layer formed over the first insulating layer, a second insulating layer formed over the first trapping layer, and a second trapping layer formed over the second insulating layer. One or more traps in the first and second trapping layers are configured to capture or release one or more carriers flowing through the channel region. The random noise signal is generated as a function of one or more carrier being captured or released by the one or more traps.

    Multi-state transistor devices with multiple threshold voltage channels

    公开(公告)号:US10886415B2

    公开(公告)日:2021-01-05

    申请号:US16295750

    申请日:2019-03-07

    摘要: A method of forming a multi-state nanosheet transistor device is provided. The method includes forming an alternating sequence of sacrificial layer segments and differentially doped nanosheet layer segments on a substrate, wherein each of the differentially doped nanosheet layer segments has a different dopant concentration from the other differentially doped nanosheet layer segments. The method further includes forming a source/drain on each of opposite ends of the sacrificial layer segments and differentially doped nanosheet layer segments, and removing the sacrificial layer segments. The method further includes depositing a gate dielectric layer on the differentially doped nanosheet layer segments, and forming a gate electrode on the gate dielectric layer to form a common gate-all-around structure, where each of the differentially doped nanosheet layer segments conducts current at a different threshold voltage.