Method and furnace for the vapor phase deposition of components onto semiconductor substrates with a variable main flow direction of the process gas
    1.
    发明授权
    Method and furnace for the vapor phase deposition of components onto semiconductor substrates with a variable main flow direction of the process gas 有权
    方法和炉子,用于将处理气体的可变主流向的气相成分分散到半导体衬底上

    公开(公告)号:US07241701B2

    公开(公告)日:2007-07-10

    申请号:US10675049

    申请日:2003-09-30

    Inventor: Ioannis Dotsikas

    CPC classification number: C23C16/45502 C23C16/455 H01L21/02532 H01L21/0262

    Abstract: A method and a furnace are provided for the vapor phase deposition of components onto semiconductor substrates. The main flow direction of the process gases can be varied or reversed by the furnace in the course of the method. This prevents temperature and concentration inhomogeneities of the process gas within the furnace, and permits the components to be uniformly deposited onto the semiconductor substrates.

    Abstract translation: 提供了一种方法和炉子,用于将组分气相沉积到半导体衬底上。 在方法过程中,工艺气体的主要流动方向可以由炉改变或反转。 这可以防止炉内的工艺气体的温度和浓度不均匀性,并且允许将组分均匀地沉积到半导体衬底上。

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