Abstract:
A method and a furnace are provided for the vapor phase deposition of components onto semiconductor substrates. The main flow direction of the process gases can be varied or reversed by the furnace in the course of the method. This prevents temperature and concentration inhomogeneities of the process gas within the furnace, and permits the components to be uniformly deposited onto the semiconductor substrates.
Abstract:
A semiconductor component includes a substrate having a plurality of compliant contact bumps formed over a surface thereof. A semiconductor chip has a plurality of contact regions formed over a surface thereof. The compliant contact bumps of the substrate are electrically connected with the contact regions of the semiconductor chip and wherein the semiconductor chip is mechanically attached to the substrate. As an example, this connection and attachment can be achieved by soldering the contact bumps to the contact regions.
Abstract:
A semiconductor component includes a substrate having a plurality of compliant contact bumps formed over a surface thereof. A semiconductor chip has a plurality of contact regions formed over a surface thereof. The compliant contact bumps of the substrate are electrically connected with the contact regions of the semiconductor chip and wherein the semiconductor chip is mechanically attached to the substrate. As an example, this connection and attachment can be achieved by soldering the contact bumps to the contact regions.