公开(公告)号：US20090108299A1

公开(公告)日：2009-04-30

申请号：US11976590

申请日：2007-10-25

申请人： Ioulia Smorchkova ,  Carol Namba ,  Po-Hsin Liu ,  Robert Coffie ,  Roger Tsai

发明人： Ioulia Smorchkova ,  Carol Namba ,  Po-Hsin Liu ,  Robert Coffie ,  Roger Tsai

IPC分类号： H01L29/778 ,  H01L21/338

CPC分类号： H01L29/7786 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/66462 ,  H01L29/7783

摘要： A semiconductor device includes a T-gate disposed between drain and source regions and above a barrier layer to form a Schottky contact to the channel layer. A first inactive field mitigating plate is disposed above a portion of the T-gate and a second active field plate is disposed above the barrier layer and in a vicinity of the T-gate.

摘要翻译： 半导体器件包括设置在漏极和源极区域之间以及阻挡层上方的T栅极，以形成与沟道层的肖特基接触。 第一非活性场缓和板设置在T栅极的一部分上方，并且第二有源场板设置在阻挡层上方和T栅极附近。

公开(公告)号：US07800132B2

公开(公告)日：2010-09-21

申请号：US11976590

申请日：2007-10-25

申请人： Ioulia Smorchkova ,  Carol Namba ,  Po-Hsin Liu ,  Robert Coffie ,  Roger Tsai

发明人： Ioulia Smorchkova ,  Carol Namba ,  Po-Hsin Liu ,  Robert Coffie ,  Roger Tsai

IPC分类号： H01L29/778

CPC分类号： H01L29/7786 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/66462 ,  H01L29/7783

摘要： A semiconductor device includes a T-gate disposed between drain and source regions and above a barrier layer to form a Schottky contact to the channel layer. A first inactive field mitigating plate is disposed above a portion of the T-gate and a second active field plate is disposed above the barrier layer and in a vicinity of the T-gate.

摘要翻译： 半导体器件包括设置在漏极和源极区域之间以及阻挡层上方的T栅极，以形成与沟道层的肖特基接触。 第一非活性场缓和板设置在T栅极的一部分上方，并且第二有源场板设置在阻挡层上方和T栅极附近。

公开(公告)号：US20100184262A1

公开(公告)日：2010-07-22

申请号：US12659910

申请日：2010-03-25

申请人： Ioulia Smorchkova ,  Robert Coffie ,  Ben Heying ,  Carol Namba ,  Po-Hsin Liu ,  Boris Hikin

发明人： Ioulia Smorchkova ,  Robert Coffie ,  Ben Heying ,  Carol Namba ,  Po-Hsin Liu ,  Boris Hikin

IPC分类号： H01L21/335

CPC分类号： H01L29/7787 ,  H01L21/28587 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/66462

摘要： A semiconductor device is fabricated to include source and drain contacts including an ohmic metal sunken into the barrier layer and a portion of the channel layer; a protective dielectric layer disposed between the source and drain contacts on the barrier layer; a metallization layer disposed in drain and source ohmic vias between the source contact and the protective dielectric layer and between the protective dielectric layer and the drain contact; and a metal T-gate disposed above the barrier layer including a field mitigating plate disposed on a side portion of a stem of the metal T-gate.

摘要翻译： 半导体器件被制造为包括源极和漏极触点，其包括凹陷在阻挡层中的欧姆金属和沟道层的一部分; 保护介电层，设置在阻挡层上的源极和漏极接触之间; 设置在源极和保护电介质层之间以及保护电介质层和漏极接触之间的漏极和源极欧姆通孔中的金属化层; 以及设置在所述阻挡层上方的金属T型栅极，包括设置在所述金属T型栅极的杆的侧部上的场缓和板。

公开(公告)号：US07750370B2

公开(公告)日：2010-07-06

申请号：US12003098

申请日：2007-12-20

申请人： Ioulia Smorchkova ,  Robert Coffie ,  Ben Heying ,  Carol Namba ,  Po-Hsin Liu ,  Boris Hikin

发明人： Ioulia Smorchkova ,  Robert Coffie ,  Ben Heying ,  Carol Namba ,  Po-Hsin Liu ,  Boris Hikin

IPC分类号： H01L29/778 ,  H01L21/338

CPC分类号： H01L29/7787 ,  H01L21/28587 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/66462

摘要： A semiconductor device is fabricated to include source and drain contacts including an ohmic metal sunken into the barrier layer and a portion of the channel layer; a protective dielectric layer disposed between the source and drain contacts on the barrier layer; a metallization layer disposed in drain and source ohmic vias between the source contact and the protective dielectric layer and between the protective dielectric layer and the drain contact; and a metal T-gate disposed above the barrier layer including a field mitigating plate disposed on a side portion of a stem of the metal T-gate.

摘要翻译： 半导体器件被制造为包括源极和漏极触点，其包括凹陷在阻挡层中的欧姆金属和沟道层的一部分; 保护介电层，设置在阻挡层上的源极和漏极接触之间; 设置在源极和保护电介质层之间以及保护电介质层和漏极接触之间的漏极和源极欧姆通孔中的金属化层; 以及设置在所述阻挡层上方的金属T型栅极，包括设置在所述金属T型栅极的杆的侧部上的场缓和板。

公开(公告)号：US07897446B2

公开(公告)日：2011-03-01

申请号：US12659910

申请日：2010-03-25

申请人： Ioulia Smorchkova ,  Robert Coffie ,  Ben Heying ,  Carol Namba ,  Po-Hsin Liu ,  Boris Hikin

发明人： Ioulia Smorchkova ,  Robert Coffie ,  Ben Heying ,  Carol Namba ,  Po-Hsin Liu ,  Boris Hikin

IPC分类号： H01L21/338

CPC分类号： H01L29/7787 ,  H01L21/28587 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/66462

摘要： A semiconductor device is fabricated to include source and drain contacts including an ohmic metal sunken into the barrier layer and a portion of the channel layer; a protective dielectric layer disposed between the source and drain contacts on the barrier layer; a metallization layer disposed in drain and source ohmic vias between the source contact and the protective dielectric layer and between the protective dielectric layer and the drain contact; and a metal T-gate disposed above the barrier layer including a field mitigating plate disposed on a side portion of a stem of the metal T-gate.

摘要翻译： 半导体器件被制造为包括源极和漏极触点，其包括凹陷在阻挡层中的欧姆金属和沟道层的一部分; 保护介电层，设置在阻挡层上的源极和漏极接触之间; 设置在源极和保护电介质层之间以及保护电介质层和漏极接触之间的漏极和源极欧姆通孔中的金属化层; 以及设置在所述阻挡层上方的金属T型栅极，包括设置在所述金属T型栅极的杆的侧部上的场缓和板。

公开(公告)号：US20090159930A1

公开(公告)日：2009-06-25

申请号：US12003098

申请日：2007-12-20

申请人： loulia Smorchkova ,  Robert Coffie ,  Ben Heying ,  Carol Namba ,  Po-Hsin Liu ,  Boris Hikin

发明人： loulia Smorchkova ,  Robert Coffie ,  Ben Heying ,  Carol Namba ,  Po-Hsin Liu ,  Boris Hikin

IPC分类号： H01L29/778 ,  H01L21/335

CPC分类号： H01L29/7787 ,  H01L21/28587 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/66462

摘要： A semiconductor device is fabricated to include source and drain contacts including an ohmic metal sunken into the barrier layer and a portion of the channel layer; a protective dielectric layer disposed between the source and drain contacts on the barrier layer; a metallization layer disposed in drain and source ohmic vias between the source contact and the protective dielectric layer and between the protective dielectric layer and the drain contact; and a metal T-gate disposed above the barrier layer including a field mitigating plate disposed on a side portion of a stem of the metal T-gate.

摘要翻译： 半导体器件被制造为包括源极和漏极触点，其包括凹陷在阻挡层中的欧姆金属和沟道层的一部分; 保护介电层，设置在阻挡层上的源极和漏极接触之间; 设置在源极和保护电介质层之间以及保护电介质层和漏极接触之间的漏极和源极欧姆通孔中的金属化层; 以及设置在所述阻挡层上方的金属T型栅极，包括设置在所述金属T型栅极的杆的侧部上的场缓和板。