公开(公告)号：US20050118789A1

公开(公告)日：2005-06-02

申请号：US10507175

申请日：2003-12-25

申请人： Hiroji Aga ,  Isao Yokokawa ,  Kiyotaka Takano ,  Kiyoshi Mitani

发明人： Hiroji Aga ,  Isao Yokokawa ,  Kiyotaka Takano ,  Kiyoshi Mitani

IPC分类号： H01L21/02 ,  H01L21/265 ,  H01L21/762 ,  H01L27/12 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L21/26533 ,  H01L21/76254

摘要： The present invention relates to a method of producing an SOI wafer in which an SOI layer is formed on a buried oxide film by forming an oxide film on a surface of at least one of a bond wafer and a base wafer, bonding the bond wafer to the base wafer through the formed oxide film, and making the bond wafer into a thin film, wherein after the oxide film is formed so that a total thickness of the oxide film formed on the surface of at least one of the bond wafer and the base wafer is thicker than a thickness of the buried oxide film that the SOI wafer to be produced has, the bond wafer is bonded to the base wafer through the formed oxide film, the bond wafer is made into a thin film to form an SOI layer, and thereafter, an obtained bonded wafer is subjected to heat treatment to reduce a thickness of the buried oxide film. Thereby, there can be provided a method of producing an SOI wafer in which blisters and voids are not generated even if the thickness of the buried oxide film is thinned, and its SOI layer has extremely good crystallinity.

摘要翻译： 本发明涉及一种制造SOI晶片的方法，其中通过在接合晶片和基底晶片中的至少一个的表面上形成氧化膜，在掩埋氧化膜上形成SOI层，将接合晶片接合到 通过形成的氧化膜的基底晶片，并将接合晶片制成薄膜，其中在形成氧化物膜之后，使得形成在至少一个接合晶片和基底的表面上的氧化膜的总厚度 晶片比所制造的SOI晶片的埋入氧化膜的厚度厚，通过形成的氧化膜将接合晶片接合到基底晶片，将接合晶片制成薄膜以形成SOI层， 然后，对获得的接合晶片进行热处理以减小掩埋氧化膜的厚度。 因此，可以提供一种制造SOI晶片的方法，其中即使掩埋氧化膜的厚度变薄也不会产生起泡和空隙，并且其SOI层具有非常好的结晶度。

公开(公告)号：US07524744B2

公开(公告)日：2009-04-28

申请号：US10544374

申请日：2004-02-13

申请人： Isao Yokokawa ,  Hiroji Aga ,  Kiyotaka Takano ,  Kiyoshi Mitani

发明人： Isao Yokokawa ,  Hiroji Aga ,  Kiyotaka Takano ,  Kiyoshi Mitani

IPC分类号： H01L21/425

CPC分类号： H01L21/76243 ,  H01L21/26533

摘要： The present invention provides a method of producing an SOI wafer, comprising at least steps of forming an oxygen ion-implanted layer by implanting oxygen ions into a silicon wafer from one main surface thereof, subjecting the silicon wafer to oxide film-forming heat treatment to convert the oxygen ion-implanted layer into a buried oxide film, and thereby producing an SOI wafer having an SOI layer on the buried oxide film, wherein when the buried oxide film is formed in the silicon wafer, the buried oxide film is formed so that a thickness thereof is thicker than a thickness of the buried oxide film which the SOI wafer to be produced has, and thereafter the silicon wafer in which the thicker buried oxide film is formed is subjected to a heat treatment to reduce the thickness of the buried oxide film. Thereby, there can be provided a method of producing an SOI wafer in which a high quality SOI wafer having a buried oxide film of which a film thickness is thin and perfectness is high and an SOI layer of which crystallinity and surface quality are extremely good can be produced by using SIMOX method.

摘要翻译： 本发明提供一种制造SOI晶片的方法，其至少包括通过从其一个主表面将氧离子注入硅晶片来形成氧离子注入层的步骤，将硅晶片进行氧化膜形成热处理 将氧离子注入层转换为埋入氧化膜，由此在埋入氧化膜上制造具有SOI层的SOI晶片，其中，当在硅晶片中形成掩埋氧化膜时，形成掩埋氧化膜，使得 其厚度比所制造的SOI晶片的埋入氧化膜的厚度厚，然后对其中形成较厚掩埋氧化膜的硅晶片进行热处理，以减小掩埋氧化物的厚度 电影。 因此，可以提供一种制造SOI晶片的方法，其中具有膜厚度薄且完整性高的掩埋氧化膜的高品质SOI晶片和结晶度和表面质量非常好的SOI层 使用SIMOX法生产。

公开(公告)号：US20060051945A1

公开(公告)日：2006-03-09

申请号：US10544374

申请日：2004-02-13

申请人： Isao Yokokawa ,  Hiroji Aga ,  Kiyotaka Takano ,  Kiyoshi Mitani

发明人： Isao Yokokawa ,  Hiroji Aga ,  Kiyotaka Takano ,  Kiyoshi Mitani

IPC分类号： H01L21/425 ,  H01L21/22

CPC分类号： H01L21/76243 ,  H01L21/26533

摘要： The present invention provides a method of producing an SOI wafer, comprising at least steps of forming an oxygen ion-implanted layer by implanting oxygen ions into a silicon wafer from one main surface thereof, subjecting the silicon wafer to oxide film-forming heat treatment to convert the oxygen ion-implanted layer into a buried oxide film, and thereby producing an SOI wafer having an SOI layer on the buried oxide film, wherein when the buried oxide film is formed in the silicon wafer, the buried oxide film is formed so that a thickness thereof is thicker than a thickness of the buried oxide film which the SOI wafer to be produced has, and thereafter the silicon wafer in which the thicker buried oxide film is formed is subjected to a heat treatment to reduce the thickness of the buried oxide film. Thereby, there can be provided a method of producing an SOI wafer in which a high quality SOI wafer having a buried oxide film of which a film thickness is thin and perfectness is high and an SOI layer of which crystallinity and surface quality are extremely good can be produced by using SIMOX method.

摘要翻译： 本发明提供一种制造SOI晶片的方法，其至少包括通过从其一个主表面将氧离子注入硅晶片来形成氧离子注入层的步骤，将硅晶片进行氧化膜形成热处理 将氧离子注入层转换为埋入氧化膜，由此在埋入氧化膜上制造具有SOI层的SOI晶片，其中，当在硅晶片中形成掩埋氧化膜时，形成掩埋氧化膜，使得 其厚度比所制造的SOI晶片的埋入氧化膜的厚度厚，然后对其中形成较厚掩埋氧化膜的硅晶片进行热处理，以减小掩埋氧化物的厚度 电影。 因此，可以提供一种制造SOI晶片的方法，其中具有膜厚度薄且完整性高的掩埋氧化膜的高质量SOI晶片和结晶度和表面质量非常好的SOI层可以 使用SIMOX法生产。

公开(公告)号：US07959731B2

公开(公告)日：2011-06-14

申请号：US11665977

申请日：2005-11-02

申请人： Isao Yokokawa ,  Hiroji Aga ,  Kiyoshi Mitani

发明人： Isao Yokokawa ,  Hiroji Aga ,  Kiyoshi Mitani

IPC分类号： C30B25/22

CPC分类号： H01L21/26506 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/76254 ,  Y10S117/915

摘要： A method for producing a semiconductor wafer, including epitaxially growing a Si1-XGeX layer (0

摘要翻译： 一种制造半导体晶片的方法，包括在硅单晶晶片的表面上外延生长Si1-XGeX层（0

公开(公告)号：US20080138959A1

公开(公告)日：2008-06-12

申请号：US11665977

申请日：2005-11-02

申请人： Isao Yokokawa ,  Hiroji Aga ,  Kiyoshi Mitani

发明人： Isao Yokokawa ,  Hiroji Aga ,  Kiyoshi Mitani

IPC分类号： H01L21/46

CPC分类号： H01L21/26506 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/76254 ,  Y10S117/915

摘要： The present invention is a method for producing a semiconductor wafer, comprising: at least epitaxially growing a Si1-XGeX layer (0

摘要翻译： 本发明是一种用于制造半导体晶片的方法，其包括：至少外延生长Si 1-X 1 Ge x X 1层（0

公开(公告)号：US08728912B2

公开(公告)日：2014-05-20

申请号：US13990883

申请日：2011-11-18

申请人： Hiroji Aga ,  Isao Yokokawa ,  Satoshi Oka

发明人： Hiroji Aga ,  Isao Yokokawa ,  Satoshi Oka

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/31111 ,  H01L21/76254

摘要： The present invention is directed to a method for manufacturing an SOI wafer, the method by which treatment that removes the outer periphery of a buried oxide film to obtain a structure in which a peripheral end of an SOI layer of an SOI wafer is located outside a peripheral end of the buried oxide film, and, after heat treatment is performed on the SOI wafer in a reducing atmosphere containing hydrogen or an atmosphere containing hydrogen chloride gas, an epitaxial layer is formed on a surface of the SOI layer. As a result, there is provided a method that can manufacture an SOI wafer having a desired SOI layer thickness by performing epitaxial growth without allowing a valley-shaped step to be generated in an SOI wafer with no silicon oxide film in a terrace portion, the SOI wafer fabricated by an ion implantation delamination method.

摘要翻译： 本发明涉及一种SOI晶片的制造方法，其中，除去掩埋氧化膜的外周，得到SOI晶片的SOI层的外周位于外侧的结构的方法 并且在包含氢或含有氯化氢气体的气氛的还原气氛中对SOI晶片进行热处理后，在SOI层的表面上形成外延层。 结果，提供了一种方法，其可以通过进行外延生长来制造具有期望的SOI层厚度的SOI晶片，而不会在在台面部分中没有氧化硅膜的SOI晶片中产生谷状步骤， 通过离子注入分层方法制造的SOI晶片。

公开(公告)号：US20110281420A1

公开(公告)日：2011-11-17

申请号：US13145275

申请日：2010-01-08

申请人： Hiroji Aga ,  Isao Yokokawa ,  Nobuhiko Noto

发明人： Hiroji Aga ,  Isao Yokokawa ,  Nobuhiko Noto

IPC分类号： H01L21/301

CPC分类号： H01L21/76254 ,  H01L21/30608 ,  H01L21/31111

摘要： A method for manufacturing an SOI wafer including implanting a gas ion into a bond wafer from a surface thereof to form an ion-implanted layer; bonding the ion-implanted surface of the bond wafer to a surface of a base wafer through an insulator film; and delaminating the bond wafer at the ion-implanted layer to manufacture the SOI wafer. The method further includes immersing the bonded wafer prior to the delamination of the bond wafer at the ion-implanted layer into a liquid capable of dissolving the insulator film or exposing the bonded wafer to a gas capable of dissolving the insulator film so that the insulator film located between the bond wafer and the base wafer is etched from an outer circumferential edge toward a center of the bonded wafer.

摘要翻译： 一种用于制造SOI晶片的方法，包括从其表面将气体离子注入接合晶片以形成离子注入层; 通过绝缘膜将接合晶片的离子注入表面接合到基底晶片的表面; 并在离子注入层分层接合晶片以制造SOI晶片。 该方法还包括在接合晶片在离子注入层分层之前将接合的晶片浸入能够溶解绝缘体膜的液体中或将接合的晶片暴露于能够溶解绝缘膜的气体，使得绝缘膜 位于接合晶片和基底晶片之间的位置从外圆周边缘朝向接合晶片的中心蚀刻。

公开(公告)号：US20140097523A1

公开(公告)日：2014-04-10

申请号：US14114959

申请日：2012-04-25

申请人： Hiroji Aga ,  Isao Yokokawa ,  Nobuhiko Noto

发明人： Hiroji Aga ,  Isao Yokokawa ,  Nobuhiko Noto

IPC分类号： H01L21/762 ,  H01L29/02 ,  H01L21/265

CPC分类号： H01L29/02 ,  H01L21/265 ,  H01L21/26586 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76254 ,  Y10S438/977

摘要： A method for manufacturing a bonded wafer includes: an ion implantation step of using a batch type ion implanter; a bonding step of bonding an ion implanted surface of a bond wafer to a surface of a base wafer directly or through an insulator film; and a delamination step of delaminating the bond wafer at an ion implanted layer, thereby manufacturing a bonded wafer having a thin film on the base wafer, wherein the ion implantation into the bond wafer carried out at the ion implantation step is divided into a plurality of processes, the bond wafer is rotated on its own axis a predetermined rotation angle after each ion implantation, and the next ion implantation is carried out at an arrangement position obtained by the rotation.

摘要翻译： 制造接合晶片的方法包括：使用间歇型离子注入机的离子注入步骤; 键合步骤，将接合晶片的离子注入表面直接或通过绝缘膜粘合到基底晶片的表面; 以及在离子注入层分层接合晶片的分层步骤，由此在基底晶片上制造具有薄膜的接合晶片，其中在离子注入步骤中执行的接合晶片的离子注入被分成多个 在每次离子注入之后，接合晶片在其自身的轴上旋转预定的旋转角度，并且在通过旋转获得的布置位置处执行下一个离子注入。

公开(公告)号：US20140186977A1

公开(公告)日：2014-07-03

申请号：US14240432

申请日：2012-08-21

申请人： Isao Yokokawa ,  Hiroji Aga ,  Yasushi Mizusawa

发明人： Isao Yokokawa ,  Hiroji Aga ,  Yasushi Mizusawa

IPC分类号： H01L21/66

CPC分类号： H01L22/12 ,  G01B11/306 ,  G01B21/20 ,  H01L21/76254 ,  H01L21/76256 ,  H01L22/20

摘要： A method for calculating a warpage of a bonded SOI wafer includes: assuming that the epitaxial growth SOI wafer is a silicon single crystal wafer having the same dopant concentration as dopant concentration of the bond wafer; calculating a warpage A that occurs at the time of performing the epitaxial growth relative to the assumed silicon single crystal wafer; calculating a warpage B caused due to a thickness of the BOX layer of the epitaxial growth SOI wafer; determining a measured value of a warpage of the base wafer before bonding as a warpage C; and calculating a sum of the warpages (A+B+C) as the warpage of the bonded SOI wafer.

摘要翻译： 用于计算接合SOI晶片的翘曲的方法包括：假设外延生长SOI晶片是具有与接合晶片的掺杂剂浓度相同的掺杂剂浓度的硅单晶晶片; 计算在相对于假定的硅单晶晶片进行外延生长时发生的翘曲A; 计算由外延生长SOI晶片的BOX层的厚度引起的翘曲B. 在接合之前确定基底晶片的翘曲的测量值作为翘曲C; 并计算翘曲（A + B + C）的和作为接合的SOI晶片的翘曲。

公开(公告)号：US20130316522A1

公开(公告)日：2013-11-28

申请号：US13990883

申请日：2011-11-18

申请人： Hiroji Aga ,  Isao Yokokawa ,  Satoshi Oka

发明人： Hiroji Aga ,  Isao Yokokawa ,  Satoshi Oka

IPC分类号： H01L21/02

CPC分类号： H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/31111 ,  H01L21/76254

摘要： The present invention is directed to a method for manufacturing an SOI wafer, the method by which treatment that removes the outer periphery of a buried oxide film to obtain a structure in which a peripheral end of an SOI layer of an SOI wafer is located outside a peripheral end of the buried oxide film, and, after heat treatment is performed on the SOI wafer in a reducing atmosphere containing hydrogen or an atmosphere containing hydrogen chloride gas, an epitaxial layer is formed on a surface of the SOI layer. As a result, there is provided a method that can manufacture an SOI wafer having a desired SOI layer thickness by performing epitaxial growth without allowing a valley-shaped step to be generated in an SOI wafer with no silicon oxide film in a terrace portion, the SOI wafer fabricated by an ion implantation delamination method.

摘要翻译： 本发明涉及一种SOI晶片的制造方法，其中，除去掩埋氧化膜的外周，得到SOI晶片的SOI层的外周位于外侧的结构的方法 并且在包含氢或含有氯化氢气体的气氛的还原气氛中对SOI晶片进行热处理后，在SOI层的表面上形成外延层。 结果，提供了一种方法，其可以通过进行外延生长来制造具有期望的SOI层厚度的SOI晶片，而不会在在台面部分中没有氧化硅膜的SOI晶片中产生谷状步骤， 通过离子注入分层方法制造的SOI晶片。