Systems and methods for memory interface calibration
    4.
    发明授权
    Systems and methods for memory interface calibration 有权
    用于存储器接口校准的系统和方法

    公开(公告)号:US09323538B1

    公开(公告)日:2016-04-26

    申请号:US13539153

    申请日:2012-06-29

    摘要: Integrated circuits such as programmable integrated circuits may include calibration circuitry for calibrating memory interface circuitry. The calibration circuitry may include processing circuitry and test circuitry. The processing circuitry may provide instructions to the test circuitry and direct the test circuitry to begin processing at a selected instruction. The test circuitry may retrieve data storage addresses and control signal storage addresses from the instructions. The test circuitry may use the data storage address to retrieve test data from data storage circuitry and may use the control signal storage address to retrieve control signal data from control signal storage circuitry. The control signal, address, and test data may be provided to the memory interface circuitry. The test circuitry may verify data received from the system memory during instruction processing.

    摘要翻译: 诸如可编程集成电路的集成电路可以包括用于校准存储器接口电路的校准电路。 校准电路可以包括处理电路和测试电路。 处理电路可以向测试电路提供指令,并指示测试电路在所选择的指令下开始处理。 测试电路可以从指令中检索数据存储地址和控制信号存储地址。 测试电路可以使用数据存储地址从数据存储电路检索测试数据,并且可以使用控制信号存储地址从控制信号存储电路中检索控制信号数据。 控制信号,地址和测试数据可以被提供给存储器接口电路。 测试电路可以在指令处理期间验证从系统存储器接收到的数据。

    Methods for calibrating memory interface circuitry
    6.
    发明授权
    Methods for calibrating memory interface circuitry 有权
    校准存储器接口电路的方法

    公开(公告)号:US08565033B1

    公开(公告)日:2013-10-22

    申请号:US13149562

    申请日:2011-05-31

    IPC分类号: G11C7/00

    摘要: Integrated circuits may communicate with off-chip memory. Such types of integrated circuits may include memory interface circuitry that is used to interface with the off-chip memory. The memory interface circuitry may be calibrated using a procedure that includes read calibration, write leveling, read latency tuning, and write calibration. Read calibration may serve to ensure proper gating of data strobe signals and to center the data strobe signals with respect to read data signals. Write leveling ensures that the data strobe signals are aligned to system clock signals. Read latency tuning serves to adjust read latency to ensure optimum read performance. Write calibration may serve to center the data strobe signals with respect to write data signals. These calibration operations may be used to calibrate memory systems supporting a variety of memory communications protocols.

    摘要翻译: 集成电路可以与片外存储器通信。 这种类型的集成电路可以包括用于与片外存储器进行接口的存储器接口电路。 可以使用包括读取校准,写入调平,读取延迟调整和写入校准的过程校准存储器接口电路。 读取校准可用于确保数据选通信号的适当门控,并使数据选通信号相对于读取数据信号居中。 写入调平确保数据选通信号与系统时钟信号对齐。 读延迟调整用于调整读取延迟,以确保最佳读取性能。 写入校准可以用于使数据选通信号相对于写数据信号居中。 这些校准操作可用于校准支持各种存储器通信协议的存储器系统。