公开(公告)号：US20160181194A1

公开(公告)日：2016-06-23

申请号：US14964121

申请日：2015-12-09

Applicant: J-Devices Corporation

Inventor： Yoshihiko IKEMOTO ,  Shigenori SAWACHI ,  Fumihiko TANIGUCHI ,  Akio KATSUMATA

IPC: H01L23/498 ,  H01L23/31

CPC classification number: H01L23/3142 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/5227 ,  H01L23/552 ,  H01L24/19 ,  H01L24/20 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73267

Abstract: The present invention is to provide a semiconductor device in which the generation of the eddy current in a metal flat plate is reduced, and the Q value of the RF circuit of the semiconductor device is improved even using the metal flat plate as a support.

Abstract translation: 本发明提供一种半导体器件，其中金属平板中的涡电流的产生减小，并且即使使用金属平板作为支撑件，也提高了半导体器件的RF电路的Q值。