公开(公告)号：US20090189164A1

公开(公告)日：2009-07-30

申请号：US12419821

申请日：2009-04-07

申请人： JAMES S. IM ,  Robert S. Sposili ,  Mark A. Crowder

发明人： JAMES S. IM ,  Robert S. Sposili ,  Mark A. Crowder

IPC分类号： H01L33/00

CPC分类号： B23K26/0622 ,  B23K26/0626 ,  B23K26/066 ,  G03F7/70041 ,  G03F7/70725 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04

摘要： Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, homoginizing each modulated laser pulse in the sequence in a predetermined plane, masking portions of each homoginized fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in the pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beamlet corresponding to the slit, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in the sequence of pulses of patterned beamlets, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film.

公开(公告)号：US20090173948A1

公开(公告)日：2009-07-09

申请号：US12402208

申请日：2009-03-11

申请人： JAMES S. IM ,  ROBERT S. SPOSILI ,  MARK A. CROWDER

发明人： JAMES S. IM ,  ROBERT S. SPOSILI ,  MARK A. CROWDER

IPC分类号： H01L33/00 ,  H01L27/085 ,  H01L29/02

CPC分类号： B23K26/0622 ,  B23K26/0626 ,  B23K26/066 ,  G03F7/70041 ,  G03F7/70725 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04

摘要： Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, homoginizing each modulated laser pulse in the sequence in a predetermined plane, masking portions of each homoginized fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in the pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beamlet corresponding to the slit, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in the sequence of pulses of patterned beamlets, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film.

摘要翻译： 公开了将非晶硅薄膜样品加工成多晶硅薄膜的方法。 在一个优选的布置中，一种方法包括以下步骤：产生准分子激光脉冲序列，可控制地将序列中的每个准分子激光脉冲调制成预定的注量，在预定的平面中使序列中的每个调制的激光脉冲均匀化， 均匀注入能量密度控制的激光脉冲具有两维狭缝图案的序列，以产生线图案化子束的注量控制脉冲序列，狭缝图案中的每个狭缝足够窄以防止在硅薄层区域中引起显着成核 通过对应于狭缝的子束照射的薄膜样品，以可控流程控制的狭缝图案化子束的顺序照射非晶硅薄膜样品，以按照图案化子束的脉冲序列对应于每个注量控制的图案化子束脉冲的部分进行熔化， 并可控地顺序地翻译一个关系 相对于狭缝图案化子束的每个注量控制脉冲的样品的位置，从而将非晶硅薄膜样品处理成单个或多晶硅薄膜。

公开(公告)号：US20100197147A1

公开(公告)日：2010-08-05

申请号：US12708307

申请日：2010-02-18

申请人： JAMES S. IM

发明人： JAMES S. IM

IPC分类号： H01L21/268

CPC分类号： H01L21/02686 ,  B23K26/066 ,  H01L21/02 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/02678 ,  H01L21/2026 ,  H01L21/324 ,  H01L27/1285 ,  H01L27/1296 ,  Y10T117/10 ,  Y10T117/1088

摘要： High throughput systems and processes for recrystallizing thin film semiconductors that have been deposited at low temperatures on a substrate are provided. A thin film semiconductor workpiece is irradiated with a laser beam to melt and recrystallize target areas of the surface exposed to the laser beam. The laser beam is shaped into one or more beamlets using patterning masks. The mask patterns have suitable dimensions and orientations to pattern the laser beam radiation so that the areas targeted by the beamlets have dimensions and orientations that are conducive to semiconductor recrystallization. The workpiece is mechanically translated along linear paths relative to the laser beam to process the entire surface of the work piece at high speeds. Position sensitive triggering of a laser can be used generate laser beam pulses to melt and recrystallize semiconductor material at precise locations on the surface of the workpiece while it is translated on a motorized stage.

摘要翻译： 提供了在低温下沉积在衬底上的用于重结晶薄膜半导体的高通量系统和工艺。 用激光束照射薄膜半导体工件以熔化暴露于激光束的表面的目标区域的再结晶。 使用图案掩模将激光束成形为一个或多个子束。 掩模图案具有适当的尺寸和取向以对激光束辐射进行图案，使得由子束靶向的区域具有有利于半导体重结晶的尺寸和取向。 工件沿着相对于激光束的线性路径被机械平移，以高速处理工件的整个表面。 可以使用位置敏感的激光触发来产生激光束脉冲，以在半导体材料在电动平台上平移时在工件表面上的精确位置处熔融和重结晶半导体材料。

公开(公告)号：US20100065853A1

公开(公告)日：2010-03-18

申请号：US12556451

申请日：2009-09-09

申请人： JAMES S. IM

发明人： JAMES S. IM

IPC分类号： H01L29/04 ,  G21G5/00

CPC分类号： H01L21/02686 ,  B23K26/0622 ,  B23K26/066 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66742 ,  H01L29/78651

摘要： A process and system for processing a thin film sample are provided. In particular, a beam generator can be controlled to emit at least one beam pulse. The beam pulse is then masked to produce at least one masked beam pulse, which is used to irradiate at least one portion of the thin film sample. With the at least one masked beam pulse, the portion of the film sample is irradiated with sufficient intensity for such portion to later crystallize. This portion of the film sample is allowed to crystallize so as to be composed of a first area and a second area. Upon the crystallization thereof, the first area includes a first set of grains, and the second area includes a second set of grains whose at least one characteristic is different from at least one characteristic of the second set of grains. The first area surrounds the second area, and is configured to allow an active region of a thin-film transistor (“TFT”) to be provided at a distance therefrom.

摘要翻译： 提供了一种用于处理薄膜样品的方法和系统。 特别地，可以控制光束发生器发射至少一个光束脉冲。 然后对光束脉冲进行掩模以产生至少一个掩模束脉冲，其用于照射薄膜样品的至少一部分。 利用至少一个掩蔽光束脉冲，膜样品的部分被照射足够的强度用于这种部分以后结晶。 允许该薄膜样品的该部分结晶，以便由第一区域和第二区域组成。 在其结晶时，第一区域包括第一组晶粒，第二区域包括第二组晶粒，其至少一个特性与第二组晶粒的至少一个特征不同。 第一区域围绕第二区域，并且被配置为允许在与其一定距离处提供薄膜晶体管（“TFT”）的有源区域。