公开(公告)号：US20190194796A1

公开(公告)日：2019-06-27

申请号：US16329037

申请日：2017-06-01

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Hiroshi FUJIOKA ,  Kohei UENO

IPC: C23C14/06 ,  C23C14/34 ,  H01L21/203 ,  H01L29/778 ,  H01L29/786 ,  H01L29/812 ,  H01L33/32 ,  H01S5/042 ,  H01S5/183 ,  H01S5/343

CPC classification number: C23C14/0641 ,  C23C14/06 ,  C23C14/34 ,  H01L21/20 ,  H01L21/203 ,  H01L29/778 ,  H01L29/7788 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/812 ,  H01L33/32 ,  H01L33/325 ,  H01S5/042 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/343

Abstract: A compound semiconductor has a high electron concentration of 5×1019 cm−3 or higher, exhibits an electron mobility of 46 cm2/V·s or higher, and exhibits a low electric resistance, and thus is usable to produce a high performance semiconductor device. The present invention provides a group 13 nitride semiconductor of n-type conductivity that may be formed as a film on a substrate having a large area size at a temperature of room temperature to 700° C.

公开(公告)号：US20210047720A1

公开(公告)日：2021-02-18

申请号：US17086753

申请日：2020-11-02

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Hiroshi FUJIOKA ,  Kohei UENO

IPC: C23C14/06 ,  C23C14/34 ,  H01L21/203 ,  H01L29/812 ,  H01S5/183 ,  H01S5/343 ,  H01S5/042 ,  H01L21/20 ,  H01L29/778 ,  H01L33/32 ,  H01L29/786

Abstract: A compound semiconductor has a high electron concentration of 5×1019 cm−3 or higher, exhibits an electron mobility of 46 cm2/V·s or higher, and exhibits a low electric resistance, and thus is usable to produce a high performance semiconductor device. The present invention provides a group 13 nitride semiconductor of n-type conductivity that may be formed as a film on a substrate having a large area size at a temperature of room temperature to 700° C.