公开(公告)号：US20210047720A1

公开(公告)日：2021-02-18

申请号：US17086753

申请日：2020-11-02

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Hiroshi FUJIOKA ,  Kohei UENO

IPC: C23C14/06 ,  C23C14/34 ,  H01L21/203 ,  H01L29/812 ,  H01S5/183 ,  H01S5/343 ,  H01S5/042 ,  H01L21/20 ,  H01L29/778 ,  H01L33/32 ,  H01L29/786

Abstract: A compound semiconductor has a high electron concentration of 5×1019 cm−3 or higher, exhibits an electron mobility of 46 cm2/V·s or higher, and exhibits a low electric resistance, and thus is usable to produce a high performance semiconductor device. The present invention provides a group 13 nitride semiconductor of n-type conductivity that may be formed as a film on a substrate having a large area size at a temperature of room temperature to 700° C.

公开(公告)号：US20190194796A1

公开(公告)日：2019-06-27

申请号：US16329037

申请日：2017-06-01

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Hiroshi FUJIOKA ,  Kohei UENO

IPC: C23C14/06 ,  C23C14/34 ,  H01L21/203 ,  H01L29/778 ,  H01L29/786 ,  H01L29/812 ,  H01L33/32 ,  H01S5/042 ,  H01S5/183 ,  H01S5/343

CPC classification number: C23C14/0641 ,  C23C14/06 ,  C23C14/34 ,  H01L21/20 ,  H01L21/203 ,  H01L29/778 ,  H01L29/7788 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/812 ,  H01L33/32 ,  H01L33/325 ,  H01S5/042 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/343

Abstract: A compound semiconductor has a high electron concentration of 5×1019 cm−3 or higher, exhibits an electron mobility of 46 cm2/V·s or higher, and exhibits a low electric resistance, and thus is usable to produce a high performance semiconductor device. The present invention provides a group 13 nitride semiconductor of n-type conductivity that may be formed as a film on a substrate having a large area size at a temperature of room temperature to 700° C.

公开(公告)号：US20160225913A1

公开(公告)日：2016-08-04

申请号：US14912702

申请日：2014-08-28

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Hiroshi FUJIOKA ,  Atsushi KOBAYASHI

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/20

CPC classification number: H01L29/78681 ,  H01L29/04 ,  H01L29/2006 ,  H01L29/78603 ,  H01L29/78696

Abstract: Transistors using nitride semiconductor layers as channels were experimentally manufactured. The nitride semiconductor layers were all formed through a sputtering method. A deposition temperature was set at less than 600° C., and a polycrystalline or amorphous InxGayAlzN layer was obtained. When composition expressed with a general expression InxGayAlzN (where x+y+z=1.0) falls within a range of 0.3≦x≦1.0 and 0≦z

Abstract translation: 使用氮化物半导体层作为通道的晶体管被​​实验制造。 氮化物半导体层全部通过溅射法形成。 沉积温度设定在600℃以下，得到多晶或非晶InxGayAlzN层。 当用一般表达式InxGayAlzN（其中x + y + z = 1.0）表示的组成落在0.3≤x≤1.0且0≤z<0.4的范围内时，具有102或更高的ON / OFF比的晶体管1a可以是 获得。 也就是说，即使是多晶或非晶质膜，也具有与单晶相同的电特性。 因此，可以提供一种半导体器件，其中制造条件的限制被急剧消除，并且其包括廉价且具有优异的电特性作为通道的InGaAlN基氮化物半导体层。