公开(公告)号：US20150102283A1

公开(公告)日：2015-04-16

申请号：US14302842

申请日：2014-06-12

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Kazuhiko Matsumoto ,  Atsuhiko Kojima ,  Satoru Nagao ,  Masanori Katou ,  Yutaka Yamada ,  Kazuhiro Nagaike ,  Yasuo Ifuku ,  Hiroshi Mitani

IPC: G01N27/414 ,  H01L29/76 ,  H01L29/423 ,  H01L29/06

CPC classification number: G01N27/4145 ,  B82Y10/00 ,  B82Y30/00 ,  G01N27/4146 ,  H01L29/068 ,  H01L29/42364 ,  H01L29/7613

Abstract: A sensor capable of detecting detection targets that are necessary to be detected with high sensitivity is provided.It comprises a field-effect transistor 1A having a substrate 2, a source electrode 4 and a drain electrode 5 provided on said substrate 2, and a channel 6 forming a current path between said source electrode 4 and said drain electrode 5; wherein said field-effect transistor 1A comprises: an interaction-sensing gate 9 for immobilizing thereon a specific substance 10 that is capable of selectively interacting with the detection targets; and a gate 7 applied a voltage thereto so as to detect the interaction by the change of the characteristic of said field-effect transistor 1A.

Abstract translation: 提供能够检测需要以高灵敏度检测的检测目标的传感器。 它包括具有衬底2，设置在所述衬底2上的源电极4和漏电极5的场效应晶体管1A以及形成在所述源电极4和所述漏电极5之间的电流通路的通道6; 其中所述场效应晶体管1A包括：用于固定其上能够选择性地与检测目标相互作用的特定物质10的相互作用感测门9; 并且门7向其施加电压，以便通过所述场效应晶体管1A的特性的变化来检测相互作用。

公开(公告)号：US09506892B2

公开(公告)日：2016-11-29

申请号：US14302842

申请日：2014-06-12

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Kazuhiko Matsumoto ,  Atsuhiko Kojima ,  Satoru Nagao ,  Masanori Katou ,  Yutaka Yamada ,  Kazuhiro Nagaike ,  Yasuo Ifuku ,  Hiroshi Mitani

IPC: G01N27/414 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/06 ,  H01L29/423 ,  H01L29/76

CPC classification number: G01N27/4145 ,  B82Y10/00 ,  B82Y30/00 ,  G01N27/4146 ,  H01L29/068 ,  H01L29/42364 ,  H01L29/7613

Abstract: A sensor capable of detecting detection targets that are necessary to be detected with high sensitivity is provided.It comprises a field-effect transistor 1A having a substrate 2, a source electrode 4 and a drain electrode 5 provided on said substrate 2, and a channel 6 forming a current path between said source electrode 4 and said drain electrode 5; wherein said field-effect transistor 1A comprises: an interaction-sensing gate 9 for immobilizing thereon a specific substance 10 that is capable of selectively interacting with the detection targets; and a gate 7 applied a voltage thereto so as to detect the interaction by the change of the characteristic of said field-effect transistor 1A.